Semiconductor device and method of manufacturing semiconductor device
US-2024074198-A1 · Feb 29, 2024 · US
of the vertical channel field-effect transistor type
of the vertical channel field-effect transistor type · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B63/34 |
| Official title | {of the vertical channel field-effect transistor type} |
| Display label | of the vertical channel field-effect transistor type |
| Total patents | 1,801 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 168 |
| 2016 | 215 |
| 2017 | 166 |
| 2018 | 149 |
| 2019 | 170 |
| 2020 | 152 |
| 2021 | 142 |
| 2022 | 129 |
| 2023 | 161 |
| 2024 | 160 |
| 2025 | 151 |
| 2026 | 38 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Vertical 3D memory device and accessing method
US-11877457-B2 · Jan 16, 2024 · US
Nonvolatile memory device and method for manufacturing same
US-9224788-B2 · Dec 29, 2015 · US
Semiconductor integrated circuit apparatus and method of manufacturing the same
US-9224832-B2 · Dec 29, 2015 · US
Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same
US-2015372135-A1 · Dec 24, 2015 · US
Method for fabricating semiconductor apparatus
US-2015372058-A1 · Dec 24, 2015 · US
Method of manufacturing 3d semiconductor integrated circuit device
US-2015364381-A1 · Dec 17, 2015 · US
Semiconductor device and method for producing semiconductor device
US-2015357378-A1 · Dec 10, 2015 · US
Non-volatile storage system biasing conditions for standby and first read
US-9208873-B2 · Dec 8, 2015 · US
Vertical bjt for high density memory
US-2015349086-A1 · Dec 3, 2015 · US
Vertical bit line non-volatile memory systems and methods of fabrication
US-9202694-B2 · Dec 1, 2015 · US
Fabrication method of vertical type semiconductor memory apparatus
US-9196832-B2 · Nov 24, 2015 · US
Method of fabricating a vertical MOS transistor
US-9196654-B2 · Nov 24, 2015 · US
Memory device and method of controlling memory device
US-2015332761-A1 · Nov 19, 2015 · US
Semiconductor memory device having three-dimensional cross point array
US-9184218-B2 · Nov 10, 2015 · US
Methods of forming sidewall gates
US-9177964-B2 · Nov 3, 2015 · US
Semiconductor device having efficient capacitor arrangement
US-9177947-B2 · Nov 3, 2015 · US
Memory cells having a common gate terminal
US-2015311254-A1 · Oct 29, 2015 · US
Vertical Bit Line Wide Band Gap TFT Decoder
US-2015311256-A1 · Oct 29, 2015 · US
Memory cells, methods of forming memory cells and methods of forming memory arrays
US-9166156-B2 · Oct 20, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B63/34?
- CPC H10B63/34 is the Cooperative Patent Classification code for “of the vertical channel field-effect transistor type.”
- How many patents are filed under CPC H10B63/34 (of the vertical channel field-effect transistor type)?
- Our database includes 1,801 publications tagged with this CPC code.
- Is patent activity under CPC H10B63/34 growing?
- Publication counts under this code: 160 in 2024 vs 151 in 2025 (latest complete years).