Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US-11456258-B2 · Sep 27, 2022 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/72 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 32 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2017 | 5 |
| 2018 | 5 |
| 2019 | 11 |
| 2020 | 3 |
| 2021 | 1 |
| 2022 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Transistor structure
US-11380766-B2 · Jul 5, 2022 · US
Switching circuit and high frequency module
US-11336278-B2 · May 17, 2022 · US
Avalanche diode along with vertical PN junction and method for manufacturing the same field
US-11329185-B2 · May 10, 2022 · US
Pressure sensing unit and pressure sensor, pressure sensing device
US-11287333-B2 · Mar 29, 2022 · US
Sensor
US-11275045-B2 · Mar 15, 2022 · US
Avalanche diode along with vertical pn junction and method for manufacturing the same field
US-2021111296-A1 · Apr 15, 2021 · US
Avalanche diode along with vertical PN junction and method for manufacturing the same field
US-10872995-B2 · Dec 22, 2020 · US
Transistor with fluorinated graphene spacer
US-10665678-B2 · May 26, 2020 · US
Stretchable Form of Single Crystal Silicon for High Performance Electronics on Rubber Substrates
US-2020013720-A1 · Jan 9, 2020 · US
Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor
US-10497718-B2 · Dec 3, 2019 · US
Method of manufacturing semiconductor device
US-10453917-B2 · Oct 22, 2019 · US
Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor
US-2019304998-A1 · Oct 3, 2019 · US
Avalanche Diode and Method for Manufacturing the Same Field
US-2019221704-A1 · Jul 18, 2019 · US
Transistor with fluorinated graphene spacer
US-2019221645-A1 · Jul 18, 2019 · US
Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US-10355113-B2 · Jul 16, 2019 · US
Method of manufacturing semiconductor device
US-2019165092-A1 · May 30, 2019 · US
Avalanche diode including vertical PN junction
US-10283664-B2 · May 7, 2019 · US
Transistor with fluorinated graphene spacer
US-10263080-B2 · Apr 16, 2019 · US
Nitride semiconductor device
US-10249748-B2 · Apr 2, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/72?
- CPC H01L29/72 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/72 (Electricity)?
- Our database includes 32 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/72 growing?
- Publication counts under this code: 1 in 2021 vs 6 in 2022 (latest complete years).