Strain compensation in transistors
US-2016372607-A1 · Dec 22, 2016 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/155 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 344 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 33 |
| 2016 | 52 |
| 2017 | 59 |
| 2018 | 38 |
| 2019 | 41 |
| 2020 | 35 |
| 2021 | 19 |
| 2022 | 17 |
| 2023 | 22 |
| 2024 | 25 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-9520489-B2 · Dec 13, 2016 · US
Element, and oscillator and information acquiring device including the element
US-2016344343-A1 · Nov 24, 2016 · US
Fabrication methodology for optoelectronic integrated circuits
US-9490336-B1 · Nov 8, 2016 · US
Application of super lattice films on insulator to lateral bipolar transistors
US-2016322481-A1 · Nov 3, 2016 · US
Compound semiconductor device and method of manufacturing the same
US-2016315179-A1 · Oct 27, 2016 · US
Integrated multichannel and single channel device structure and method of making the same
US-2016315152-A1 · Oct 27, 2016 · US
Multichannel devices with gate structures to increase breakdown voltage
US-2016293713-A1 · Oct 6, 2016 · US
FinFET having superlattice stressor
US-9450098-B2 · Sep 20, 2016 · US
Artificially engineered iii-nitride digital alloy
US-2016260804-A1 · Sep 8, 2016 · US
III-nitride based semiconductor structure
US-9437687-B2 · Sep 6, 2016 · US
Nitride semiconductor
US-2016254378-A1 · Sep 1, 2016 · US
Buffer stack for group iiia-n devices
US-2016218202-A1 · Jul 28, 2016 · US
Semiconductor device and method of manufacturing the same
US-9401405-B2 · Jul 26, 2016 · US
Manufacturing method for semiconductor device
US-9385211-B2 · Jul 5, 2016 · US
Strain compensation in transistors
US-2016190345-A1 · Jun 30, 2016 · US
Method and Structure for III-V FinFET
US-2016163844-A1 · Jun 9, 2016 · US
Quantum Well Fin-Like Field Effect Transistor (QWFINFET) Having a Two-Section Combo QW Structure
US-2016163843-A1 · Jun 9, 2016 · US
Semiconductor wafer and method of producing semiconductor wafer
US-2016149000-A1 · May 26, 2016 · US
III-Nitride Semiconductor Structure with Intermediate and Transition Layers
US-2016126315-A1 · May 5, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/155?
- CPC H01L29/155 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/155 (Electricity)?
- Our database includes 344 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/155 growing?
- Publication counts under this code: 25 in 2024 vs 3 in 2025 (latest complete years).