Method for manufacturing molybdenum oxide-containing thin film
US-2015371859-A1 · Dec 24, 2015 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/28194 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 473 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 60 |
| 2016 | 55 |
| 2017 | 38 |
| 2018 | 45 |
| 2019 | 58 |
| 2020 | 60 |
| 2021 | 36 |
| 2022 | 32 |
| 2023 | 28 |
| 2024 | 30 |
| 2025 | 28 |
| 2026 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
High growth rate process for conformal aluminum nitride
US-9214334-B2 · Dec 15, 2015 · US
Electronic devices including barium strontium titanium oxide films
US-9202686-B2 · Dec 1, 2015 · US
Method of manufacturing semiconductor device and substrate processing apparatus
US-2015325447-A1 · Nov 12, 2015 · US
Semiconductor device dielectric interface layer
US-9177784-B2 · Nov 3, 2015 · US
Atomic layer deposition chamber with multi inject
US-9175394-B2 · Nov 3, 2015 · US
System and method for mitigating oxide growth in a gate dielectric
US-9177806-B2 · Nov 3, 2015 · US
Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics
US-9178031-B2 · Nov 3, 2015 · US
Self-adaptive composite tunneling field effect transistor and method for fabricating the same
US-9171944-B2 · Oct 27, 2015 · US
Method for forming a power semiconductor device
US-9171728-B2 · Oct 27, 2015 · US
Semiconductor device and method for manufacturing the same
US-9166021-B2 · Oct 20, 2015 · US
Plasma treated semiconductor dichalcogenide materials and devices therefrom
US-2015294875-A1 · Oct 15, 2015 · US
Methods of forming a semiconductor device
US-9159582-B2 · Oct 13, 2015 · US
Tunnel mosfet with ferroelectric gate stack
US-2015287802-A1 · Oct 8, 2015 · US
Plasma atomic layer deposition
US-2015279681-A1 · Oct 1, 2015 · US
Methods of forming isolated channel regions for a finfet semiconductor device and the resulting device
US-2015270398-A1 · Sep 24, 2015 · US
Method of forming different voltage devices with high-K metal gate
US-9142566-B2 · Sep 22, 2015 · US
Method for manufacturing semiconductor device
US-2015262887-A1 · Sep 17, 2015 · US
Method for fabricating oxides/semiconductor interfaces
US-2015255268-A1 · Sep 10, 2015 · US
Methods of forming semiconductor structures comprising aluminum oxide
US-9129798-B1 · Sep 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/28194?
- CPC H01L21/28194 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/28194 (Electricity)?
- Our database includes 473 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/28194 growing?
- Publication counts under this code: 30 in 2024 vs 28 in 2025 (latest complete years).