Method for producing a iii-n material-based layer
US-2024038532-A1 · Feb 1, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02458 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 1,663 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 202 |
| 2016 | 198 |
| 2017 | 193 |
| 2018 | 176 |
| 2019 | 187 |
| 2020 | 156 |
| 2021 | 133 |
| 2022 | 116 |
| 2023 | 103 |
| 2024 | 119 |
| 2025 | 66 |
| 2026 | 14 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
US-2015380237-A1 · Dec 31, 2015 · US
Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method
US-9219123-B2 · Dec 22, 2015 · US
Defect capping method for reduced defect density epitaxial articles
US-9218954-B2 · Dec 22, 2015 · US
Nitride based semiconductor device and manufacturing method thereof
US-9209253-B2 · Dec 8, 2015 · US
Growing III-V compound semiconductors from trenches filled with intermediate layers
US-9209023-B2 · Dec 8, 2015 · US
Method of manufacturing semiconductor element
US-2015348780-A1 · Dec 3, 2015 · US
Iii nitride epitaxial substrate and method of producing the same
US-2015340230-A1 · Nov 26, 2015 · US
Iii-v transistor and method for manufacturing same
US-2015325689-A1 · Nov 12, 2015 · US
Method for producing a light-emitting diode
US-9184337-B2 · Nov 10, 2015 · US
Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
US-9178091-B2 · Nov 3, 2015 · US
Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer
US-9159853-B2 · Oct 13, 2015 · US
Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
US-2015287589-A1 · Oct 8, 2015 · US
Semiconductor stacked body, method for manufacturing same, and semiconductor element
US-9153648-B2 · Oct 6, 2015 · US
Vertical nitride semiconductor device
US-2015270356-A1 · Sep 24, 2015 · US
Method for forming a nanowire field effect transistor device having a replacement gate
US-9136332-B2 · Sep 15, 2015 · US
Group iii nitride semiconductor device, p-type contact structure, and method for fabricating group iii nitride semiconductor device
US-2015255958-A1 · Sep 10, 2015 · US
Group III-V device with a selectively modified impurity concentration
US-9129890-B2 · Sep 8, 2015 · US
Semiconductor device and method of manufacturing the same
US-9123534-B2 · Sep 1, 2015 · US
Method of selective growth without catalyst on a semiconducting structure
US-9117674-B2 · Aug 25, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02458?
- CPC H01L21/02458 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02458 (Electricity)?
- Our database includes 1,663 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02458 growing?
- Publication counts under this code: 119 in 2024 vs 66 in 2025 (latest complete years).