Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method
US-9219123-B2 · Dec 22, 2015 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/0237 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 330 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 95 |
| 2016 | 69 |
| 2017 | 65 |
| 2018 | 41 |
| 2019 | 15 |
| 2020 | 20 |
| 2021 | 10 |
| 2022 | 2 |
| 2023 | 5 |
| 2024 | 5 |
| 2025 | 2 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Defect capping method for reduced defect density epitaxial articles
US-9218954-B2 · Dec 22, 2015 · US
ZNSNO3/ZNO nanowire having core-shell structure, method of forming ZNSNO3/ZNO nanowire and nanogenerator including ZNSNO3/ZNO nanowire, and method of forming ZNSNO3 nanowire and nanogenerator including ZNSNO3 nanowire
US-9214343-B2 · Dec 15, 2015 · US
Barrier infrared detectors on lattice mismatch substrates
US-9214581-B2 · Dec 15, 2015 · US
Semiconductor device and method of fabricating the same
US-9209358-B2 · Dec 8, 2015 · US
Light emitting device and light emitting device package having the same
US-9202970-B2 · Dec 1, 2015 · US
Method for producing a thin-film semiconductor body and thin-film semiconductor body
US-9202967-B2 · Dec 1, 2015 · US
Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
US-9202895-B2 · Dec 1, 2015 · US
Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene
US-9196478-B2 · Nov 24, 2015 · US
Formation of group III-V material layers on patterned substrates
US-9196795-B2 · Nov 24, 2015 · US
Method for producing group III nitride semiconductor and template substrate
US-9196687-B2 · Nov 24, 2015 · US
Semiconductor device and method
US-9196477-B2 · Nov 24, 2015 · US
Method of producing semiconductor wafer, and semiconductor wafer
US-9184240-B2 · Nov 10, 2015 · US
Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
US-9178091-B2 · Nov 3, 2015 · US
Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
US-2015303060-A1 · Oct 22, 2015 · US
Methods of passivating surfaces of wide bandgap semiconductor devices
US-9166033-B2 · Oct 20, 2015 · US
Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
US-9157169-B2 · Oct 13, 2015 · US
Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element
US-9147804-B2 · Sep 29, 2015 · US
Methods for growing a non-phase separated group-III nitride semiconductor alloy
US-9142413-B2 · Sep 22, 2015 · US
Method for preparing semiconductor nanocrystals
US-9139435-B2 · Sep 22, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/0237?
- CPC H01L21/0237 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/0237 (Electricity)?
- Our database includes 330 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/0237 growing?
- Publication counts under this code: 5 in 2024 vs 2 in 2025 (latest complete years).