One time programmable (otp) magnetoresistive random-access memory (mram)
US-2025078892-A1 · Mar 6, 2025 · US
using magnetic or inductive elements (G11C17/14 takes precedence)
using magnetic or inductive elements (G11C17/14 takes precedence) · Cooperative Patent Classification (CPC)
Computing, optics, measurement, and control technologies.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | G11C17/02 |
| Official title | using magnetic or inductive elements (G11C17/14 takes precedence) |
| Display label | using magnetic or inductive elements (G11C17/14 takes precedence) |
| Total patents | 71 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly growing.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 5 |
| 2017 | 8 |
| 2018 | 7 |
| 2019 | 6 |
| 2020 | 7 |
| 2021 | 3 |
| 2022 | 4 |
| 2023 | 5 |
| 2024 | 7 |
| 2025 | 10 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
One time programmable (OTP) magnetoresistive random-access memory (MRAM)
US-12170105-B2 · Dec 17, 2024 · US
Low resistance MTJ antifuse circuitry designs and methods of operation
US-12142309-B2 · Nov 12, 2024 · US
Memory with one-time programmable (otp) cells
US-2024321372-A1 · Sep 26, 2024 · US
Magnetic memory device
US-12035540-B2 · Jul 9, 2024 · US
Function switchable magnetic random access memory and method for manufacturing the same
US-11972786-B2 · Apr 30, 2024 · US
Semiconductor device
US-2024126472-A1 · Apr 18, 2024 · US
Systems and methods for ensuring high read reliability in pre-programmed memory cells
US-2024062796-A1 · Feb 22, 2024 · US
Low resistance mtj antifuse circuitry designs and methods of operation
US-2023267982-A1 · Aug 24, 2023 · US
One time programmable (otp) magnetoresistive random-access memory (mram)
US-2023223062-A1 · Jul 13, 2023 · US
One time programmable (OTP) magnetoresistive random-access memory (MRAM)
US-11594269-B2 · Feb 28, 2023 · US
MJT based anti-fuses with low programming voltage
US-11563054-B2 · Jan 24, 2023 · US
Function switchable magnetic random access memory and method for manufacturing the same
US-2023011349-A1 · Jan 12, 2023 · US
Semiconductor device
US-2022382483-A1 · Dec 1, 2022 · US
Operating method of physically unclonable function magnetic memory device
US-2022231867-A1 · Jul 21, 2022 · US
Magnetic memory device
US-2022028928-A1 · Jan 27, 2022 · US
Semiconductor device
US-11227647-B2 · Jan 18, 2022 · US
One time programmable (otp) magnetoresistive random-access memory (mram)
US-2021398579-A1 · Dec 23, 2021 · US
Semiconductor device
US-2021098043-A1 · Apr 1, 2021 · US
MRAM device comprising random access memory (RAM) and embedded read only memory (ROM)
US-10964367-B1 · Mar 30, 2021 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC G11C17/02?
- CPC G11C17/02 is the Cooperative Patent Classification code for “using magnetic or inductive elements (G11C17/14 takes precedence).”
- How many patents are filed under CPC G11C17/02 (using magnetic or inductive elements (G11C17/14 takes precedence))?
- Our database includes 71 publications tagged with this CPC code.
- Is patent activity under CPC G11C17/02 growing?
- Publication counts under this code: 7 in 2024 vs 10 in 2025 (latest complete years).