Layered double hydroxide crystal, anion adsorbent, and method for producing layered double hydroxide crystal
US-12492135-B2 · Dec 9, 2025 · US
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by cooling of the solution
by cooling of the solution · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B9/04 |
| Official title | by cooling of the solution |
| Display label | by cooling of the solution |
| Total patents | 22 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 3 |
| 2018 | 1 |
| 2019 | 2 |
| 2020 | 2 |
| 2021 | 2 |
| 2022 | 6 |
| 2023 | 4 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for purifying a thallium compound using a carbon powder
US-2023287596-A1 · Sep 14, 2023 · US
Method for purifying a thallium compound using a carbon powder
US-11725303-B2 · Aug 15, 2023 · US
Method of improving thermoelectric performance of SnSe thermoelectric material
US-11723273-B2 · Aug 8, 2023 · US
P-type SnSe crystal capable of being used as thermoelectric refrigeration material and preparation method thereof
US-11629431-B2 · Apr 18, 2023 · US
Method for making iron telluride
US-11525190-B2 · Dec 13, 2022 · US
P-TYPE SnSe CRYSTAL CAPABLE OF BEING USED AS THERMOELECTRIC REFRIGERATION MATERIAL AND PREPARATION METHOD THEREOF
US-2022389613-A1 · Dec 8, 2022 · US
Layered Double Hydroxide Crystal, Anion Adsorbent, and Method for Producing Layered Double Hydroxide Crystal
US-2022315452-A1 · Oct 6, 2022 · US
Method for making iron telluride
US-2022307155-A1 · Sep 29, 2022 · US
METHOD OF IMPROVING THERMOELECTRIC PERFORMANCE OF SnSe THERMOELECTRIC MATERIAL
US-2022190228-A1 · Jun 16, 2022 · US
Method for purifying an inorganic material using a tube having a bend between a first end and a second end of the tube
US-2022033993-A1 · Feb 3, 2022 · US
Silicon based fusion composition and manufacturing method of silicon carbide single crystal using the same
US-11203818-B2 · Dec 21, 2021 · US
Method for purifying an inorganic material using a tube having a bend between a first end and a second end of the tube
US-11060206-B2 · Jul 13, 2021 · US
Black phosphorus crystal having high photoelectric response rate, two-dimensional black phosphorus PN junction, and preparation method and use thereof
US-10640884-B2 · May 5, 2020 · US
Silicon Based Fusion Composition and Manufacturing Method of Silicon Carbide Single Crystal Using the Same
US-2020010973-A1 · Jan 9, 2020 · US
Methods for the synthesis, purification and crystal growth of inorganic crystals for hard radiation detectors
US-2019177878-A1 · Jun 13, 2019 · US
Black Phosphorus Crystal Having High Photoelectric Response Rate, Two-Dimensional Black Phosphorus PN Junction, and Preparation Method and Use Thereof
US-2019055668-A1 · Feb 21, 2019 · US
Production of free-standing crystalline material layers
US-9970126-B2 · May 15, 2018 · US
Semiconductor crystal removal apparatus and production method for semiconductor crystal
US-9388506-B2 · Jul 12, 2016 · US
Ultrapure mineralizers and methods for nitride crystal growth
US-9299555-B1 · Mar 29, 2016 · US