Production of free-standing crystalline material layers

Patent metadata

Field	Value
Publication number	US-9970126-B2
Application number	US-201414770194-A
Country	US
Kind code	B2
Filing date	Feb 20, 2014
Priority date	Feb 26, 2013
Publication date	May 15, 2018
Grant date	May 15, 2018

Abstract

Herein is provided a growth structure for forming a free-standing layer of crystalline material having at least one crystallographic symmetry. The growth structure includes a host substrate and a separation layer disposed on the host substrate for growth of a layer of the crystalline material thereon. The separation layer has a separation layer thickness, and is mechanically weaker than the host substrate and the crystalline material. An array of apertures is in the separation layer, each aperture extending through the separation layer thickness.

First claim

I claim:

1. A growth structure for forming a free-standing layer of crystalline material having six-fold rotational crystallographic symmetry, the growth structure comprising:
a host substrate;
a separation layer disposed on the host substrate for growth of a layer of the crystalline material on the separation layer, the separation layer having a separation layer thickness, and the separation layer having a composition that exhibits mechanical weakness in the plane of the separation layer, thereby being mechanically weaker than the host substrate and the crystalline material layer;
an array of apertures disposed in the separation layer, each aperture in the array extending through the separation layer thickness;
a crystalline growth plane in each of the apertures in the array of apertures, the crystalline growth plane having six-fold rotational crystallographic symmetry; and
the array of apertures disposed in the separation layer having six-fold rotational symmetry.

2. The growth structure of claim 1 further comprising a growth template layer disposed on the host substrate under the separation layer and providing a surface for nucleation of a crystalline growth plane in the apertures of the separation layer, wherein the growth template layer comprises a compositional component of the crystalline material.

3. The growth structure of claim 1 further comprising a layer of the crystalline material disposed an the separation layer.

4. The growth structure of claim 3 wherein the crystalline material is monocrystalline.

5. The growth structure of claim 3 wherein the crystalline material layer comprises a crystalline III-V semiconducting material.

6. The growth structure of claim 2 wherein the growth template layer comprises GaN, and further comprising a crystalline material layer of GaN disposed on the separation layer and extending down through the apertures in the separation layer to the growth template layer.

7. The growth structure of claim 3 wherein the crystalline material layer comprises a nitride.

8. The growth structure of claim 1 wherein the separation layer comprises a layer of a graphitic material.

9. The growth structure of claim 8 wherein the separation layer comprises a layer of a material selected from the group consisting of boron nitride and graphitic carbon.

10. The growth structure of claim 8 wherein the separation layer comprises a layer of a material selected from the group consisting of multi-layer graphene, graphene, and fullerene structures.

11. The growth structure of claim 8 wherein the separation layer comprises a layer of boron nitride having a thickness that is less than about 75 nm.

12. The growth structure of claim 1 wherein the crystalline growth plane exposed in each of the apertures in the array of apertures comprises a crystalline gallium nitride growth plane.

13. The growth structure of claim 1 wherein the array of apertures disposed in the separation layer comprises an array of generally circular apertures.

14. The growth structure of claim 1 wherein the array of apertures disposed in the separation layer has an aperture periodicity that is less than about 100 microns.

15. The growth structure of claim 1 further comprising a growth template layer disposed on the host substrate under the separation layer and providing a surface for nucleation of the crystalline growth plane in the apertures of the separation layer, wherein the growth template layer comprises a composition that is epitaxially compatible with crystalline gallium nitride.

Assignees

• Massachusetts Inst Technology

Inventors

• Molnar Richard J

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• C30B29/40

  AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title

• H01L21/0254

  Electricity · mapped topic