Ion Beam-Induced Epitaxial Crystallization on an Integrated Processing Architecture
US-2026068553-A1 · Mar 5, 2026 · US
Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00)
Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B1/00 |
| Official title | Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) |
| Display label | Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) |
| Total patents | 44 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 2 |
| 2017 | 7 |
| 2018 | 7 |
| 2019 | 9 |
| 2020 | 4 |
| 2021 | 1 |
| 2022 | 3 |
| 2023 | 4 |
| 2024 | 3 |
| 2025 | 1 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
SiC SUBSTRATE AND SiC COMPOSITE SUBSTRATE
US-2026043171-A1 · Feb 12, 2026 · US
Method for producing semiconductor wafers
US-12497710-B2 · Dec 16, 2025 · US
Lithium ion secondary battery and method for manufacturing the same
US-2024405258-A1 · Dec 5, 2024 · US
Lithium ion secondary battery and method for manufacturing the same
US-12074272-B2 · Aug 27, 2024 · US
Cobalt-free positive electrode material, preparation method thereof and lithium ion battery
US-2024055577-A1 · Feb 15, 2024 · US
Explosive composition for diamond synthesis
US-2023331559-A1 · Oct 19, 2023 · US
Method for manufacturing turbine component, method for repairing the same, and turbine component
US-2023311212-A1 · Oct 5, 2023 · US
Ultra low noise materials and devices for cryogenic superconductors and quantum bits
US-11727296-B2 · Aug 15, 2023 · US
Method for producing semiconductor wafers
US-2023243069-A1 · Aug 3, 2023 · US
Lithium ion secondary battery and method for manufacturing the same
US-2022263119-A1 · Aug 18, 2022 · US
Quasi-single-crystal film and manufacturing method thereof
US-11346019-B2 · May 31, 2022 · US
Lithium ion secondary battery and method for manufacturing the same
US-11335945-B2 · May 17, 2022 · US
Quasi-single-crystal film and manufacturing method thereof
US-2021032774-A1 · Feb 4, 2021 · US
Lithium ion secondary battery and method for manufacturing the same
US-2020185763-A1 · Jun 11, 2020 · US
Crystal controlled oscillator and manufacturing method of crystal controlled oscillator
US-10581437-B2 · Mar 3, 2020 · US
Lithium ion secondary battery and method for manufacturing the same
US-10566649-B2 · Feb 18, 2020 · US
Film annealing apparatus and method
US-10553461-B2 · Feb 4, 2020 · US
Nonlinear optical material and methods of fabrication
US-10409138-B2 · Sep 10, 2019 · US
Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides
US-10400351-B2 · Sep 3, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B1/00?
- CPC C30B1/00 is the Cooperative Patent Classification code for “Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00).”
- How many patents are filed under CPC C30B1/00 (Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00))?
- Our database includes 44 publications tagged with this CPC code.
- Is patent activity under CPC C30B1/00 growing?
- Publication counts under this code: 3 in 2024 vs 1 in 2025 (latest complete years).