Fluorogenic sensors for detecting antigens
US-2024201179-A1 · Jun 20, 2024 · US
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having nitrogen atoms of imino groups further bound to halogen atoms
having nitrogen atoms of imino groups further bound to halogen atoms · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C07C251/26 |
| Official title | having nitrogen atoms of imino groups further bound to halogen atoms |
| Display label | having nitrogen atoms of imino groups further bound to halogen atoms |
| Total patents | 10 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 2 |
| 2016 | 1 |
| 2017 | 3 |
| 2018 | 1 |
| 2019 | 2 |
| 2024 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Process for preparing substituted pyrazoles containing haloalkoxy- and haloalkylthio groups from alpha,alpha -dihaloalkylamines and ketimines
US-10273215-B2 · Apr 30, 2019 · US
Nitrogen-containing compounds for etching semiconductor structures
US-10256109-B2 · Apr 9, 2019 · US
PROCESS FOR PREPARING SUBSTITUTED PYRAZOLES CONTAINING HALOALKOXY- AND HALOALKYLTHIO GROUPS FROM alpha,alpha -DIHALOALKYLAMINES AND KETIMINES
US-2018186749-A1 · Jul 5, 2018 · US
Inhibitors of CD40-TRAF6 interaction
US-9750717-B2 · Sep 5, 2017 · US
Nitrogen-containing compounds for etching semiconductor structures
US-2017229316-A1 · Aug 10, 2017 · US
Nitrogen-containing compounds for etching semiconductor structures
US-9659788-B2 · May 23, 2017 · US
Inhibitors of CD40-TRAF6 interaction
US-9408829-B2 · Aug 9, 2016 · US
Nitrogen-containing compounds for etching semiconductor structures
US-2015371869-A1 · Dec 24, 2015 · US
Inhibitors of CD40-TRAF6 Interaction
US-2015190370-A1 · Jul 9, 2015 · US