Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
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Smith R Peter — Electricity
Smith R Peter holds 1 patent in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Smith R Peter |
| Technology | Electricity |
| Patents in slice | 1 |
| Recent patents in slice | 0 |
| First year | 2017 |
| Last year | 2017 |
Representative patents
Notable publications linking Smith R Peter to Electricity.
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Recent filings
Latest patents from Smith R Peter in Electricity.
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
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