Methods of making transistor devices with elevated source/drain regions to accommodate consumption during metal silicide formation process
US-9490344-B2 · Nov 8, 2016 · US
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Flachowsky Stefan patents in 2016
Flachowsky Stefan was listed as an assignee on 1 patent publication in 2016.
| Metric | Value |
|---|---|
| Company | Flachowsky Stefan |
| Year | 2016 |
| Patents | 1 |
Patents
Representative publications for Flachowsky Stefan in 2016.
Top CPC classifications
Most common classification codes for Flachowsky Stefan in 2016.
| CPC | Patents |
|---|---|
| H01L29/6659 | 1 |
| H01L29/66628 | 1 |
| H01L29/66636 | 1 |
| H01L29/7834 | 1 |
| H01L29/7847 | 1 |
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