Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
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Williams John Robert — Electricity
Williams John Robert holds 1 patent in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Williams John Robert |
| Technology | Electricity |
| Patents in slice | 1 |
| Recent patents in slice | 0 |
| First year | 2018 |
| Last year | 2018 |
Representative patents
Notable publications linking Williams John Robert to Electricity.
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Recent filings
Latest patents from Williams John Robert in Electricity.
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US-9984894-B2 · May 29, 2018 · US
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