Device and method for forming sharp extension region with controllable junction depth and lateral overlap
US-9224604-B2 · Dec 29, 2015 · US
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Lauer Isaac patents in 2015
Lauer Isaac was listed as an assignee on 5 patent publications in 2015.
| Metric | Value |
|---|---|
| Company | Lauer Isaac |
| Year | 2015 |
| Patents | 5 |
Patents
Representative publications for Lauer Isaac in 2015.
Device and method for forming sharp extension region with controllable junction depth and lateral overlap
US-9087772-B2 · Jul 21, 2015 · US
Fabrication of field-effect transistors with atomic layer doping
US-9048261-B2 · Jun 2, 2015 · US
Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors
US-9006108-B2 · Apr 14, 2015 · US
TFET with nanowire source
US-8946680-B2 · Feb 3, 2015 · US
Top CPC classifications
Most common classification codes for Lauer Isaac in 2015.
| CPC | Patents |
|---|---|
| H01L29/66636 | 4 |
| H10D62/021 | 4 |
| H01L21/3065 | 3 |
| H01L29/6659 | 3 |
| H01L29/7833 | 3 |
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