Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
US-9570675-B2 · Feb 14, 2017 · US
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Pi Ung-Hwan — Physics
Pi Ung-Hwan holds 4 patents in Physics, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Pi Ung-Hwan |
| Technology | Physics |
| Patents in slice | 4 |
| Recent patents in slice | 0 |
| First year | 2016 |
| Last year | 2017 |
Representative patents
Notable publications linking Pi Ung-Hwan to Physics.
Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
US-9570675-B2 · Feb 14, 2017 · US
Memory device using spin hall effect and methods of manufacturing and operating the memory device
US-9530478-B2 · Dec 27, 2016 · US
Memory device using spin hall effect and methods of manufacturing and operating the memory device
US-9530478-B2 · Dec 27, 2016 · US
Memory device using spin hall effect and methods of manufacturing and operating the memory device
US-9530478-B2 · Dec 27, 2016 · US
Recent filings
Latest patents from Pi Ung-Hwan in Physics.
Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
US-9570675-B2 · Feb 14, 2017 · US
Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure
US-9570675-B2 · Feb 14, 2017 · US
Memory device using spin hall effect and methods of manufacturing and operating the memory device
US-9530478-B2 · Dec 27, 2016 · US
Memory device using spin hall effect and methods of manufacturing and operating the memory device
US-9530478-B2 · Dec 27, 2016 · US
Memory device using spin hall effect and methods of manufacturing and operating the memory device
US-9530478-B2 · Dec 27, 2016 · US
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