Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure

Patent metadata

Field	Value
Publication number	US-9570675-B2
Application number	US-201414167553-A
Country	US
Kind code	B2
Filing date	Jan 29, 2014
Priority date	Mar 11, 2013
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.

First claim

What is claimed is:

1. A magnetoresistive structure, comprising:
a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface;
a second magnetic layer operatively connected to the first magnetic layer, the second magnetic layer having a changeable magnetization direction; and
a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer, wherein a first portion of the MR enhancing layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the intermediate layer has a profile conformal to a profile of the first portion of the MR enhancing layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer.

2. The magnetoresistive structure of claim 1 , wherein a total surface area of the MR enhancing layer and a total surface area of the intermediate layer are each larger than the total surface area of the first magnetic layer.

3. The magnetoresistive structure of claim 1 , wherein the second magnetic layer covers an upper portion of an outer surface of the intermediate layer.

4. The magnetoresistive structure of claim 1 , wherein the MR enhancing layer has a thickness of about 0.1 nm to about 10 nm.

5. The magnetoresistive structure of claim 1 , wherein the first magnetic layer and the second magnetic layer each include a material having a horizontal magnetic anisotropy.

6. The magnetoresistive structure of claim 1 , wherein the first magnetic layer and the second magnetic layer each include a material having a perpendicular magnetic anisotropy.

7. A magnetic random-access memory device, comprising:
a switching structure; and
a magnetoresistive structure connected to the switching structure, the magnetoresistive structure including,
a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface,
a second magnetic layer operatively connected to the first magnetic layer, the second magnetic layer having a changeable magnetization direction, and
a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer, wherein a first portion of the MR enhancing layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the intermediate layer has a profile conformal to a profile of the first portion of the MR enhancing layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer.

8. The magnetic random-access memory device of claim 7 , wherein a total surface area of the MR enhancing layer and a total surface area of the intermediate layer are each larger than the total surface area of the first magnetic layer.

9. The magnetic random-access memory device of claim 7 , wherein the second magnetic layer covers an upper portion of an outer surface of the intermediate layer.

10. The magnetic random-access memory device of claim 7 , wherein the MR enhancing layer has a thickness of about 0.1 nm to about 10 nm.

11. The magnetic random-access memory device of claim 7 , wherein the first magnetic layer and the second magnetic layer each include a material having a horizontal magnetic anisotropy.

12. The magnetic random-access memory device of claim 7 , wherein the first magnetic layer and the second magnetic layer each include a material having a perpendicular magnetic anisotropy.

13. A magnetic random-access memory device, comprising:
a first magnetic layer having a fixed magnetization direction, the first magnetic layer including an upper surface, a lower surface and side surfaces perpendicular to the upper surface and the lower surface;
a second magnetic layer operatively connected to the first magnetic layer and the second magnetic layer extends over the first magnetic layer, the second magnetic layer having a variable magnetization direction; and
a resistive structure separating the first magnetic layer and the second magnetic layer, the resistive structure including at least one magnetoresistive layer and at least one intermediate layer, wherein a first portion of the at least one magnetoresistive layer surrounds the upper surface and the side surfaces of the first magnetic layer, an inner surface of the at least one intermediate layer has a profile conformal to a profile of the first portion of the at least one magnetoresistive layer, and the second magnetic layer is operatively connected to the intermediate layer such that a total surface area of the second magnetic layer is larger than a total surface area of the first magnetic layer.

14. The magnetic random-access memory device of claim 13 , wherein the first magnetic layer has a magnetic anisotropy equal to the magnetic anisotropy of the second magnetic layer.

15. The magnetic random-access memory device of claim 13 , further comprising:
at least one passivation layer covering the side surfaces of the first magnetic layer, wherein,
the at least one passivation layer and the at least one magnetoresistive layer collectively form a protective cap over the first magnetic layer.

16. The magnetic random-access memory device of claim 13 , wherein
the at least one intermediate layer is stacked over the at least one magnetoresistive layer, and
the at least one magnetoresistive layer contacts the first magnetic layer.

17. The magnetic random-access memory device of claim 13 , wherein a width of the second magnetic layer in a direction perpendicular to a direction in which the first and the second magnetic layers are stacked is larger than a corresponding width of the first magnetic layer.

Assignees

• Kim Kee-Won
• Kim Kwang-Seok
• Lee Sung-Chul
• Jang Young-Man
• Pi Ung-Hwan
• Samsung Electronics Co Ltd

Inventors

• Kim Kee-Won
• Kim Kwang-Seok
• Lee Sung-Chul
• Jang Young-Man
• Pi Ung-Hwan

Classifications

• H01L43/08

  Electricity · mapped topic

• H01L43/12 Primary

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title