Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
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Tsai Willman — Electricity
Tsai Willman holds 1 patent in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Tsai Willman |
| Technology | Electricity |
| Patents in slice | 1 |
| Recent patents in slice | 0 |
| First year | 2016 |
| Last year | 2016 |
Representative patents
Notable publications linking Tsai Willman to Electricity.
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Recent filings
Latest patents from Tsai Willman in Electricity.
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
US-9443936-B2 · Sep 13, 2016 · US
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