Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
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Kouchiyama Akira — Electricity
Kouchiyama Akira holds 4 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Kouchiyama Akira |
| Technology | Electricity |
| Patents in slice | 4 |
| Recent patents in slice | 0 |
| First year | 2015 |
| Last year | 2017 |
Representative patents
Notable publications linking Kouchiyama Akira to Electricity.
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Recent filings
Latest patents from Kouchiyama Akira in Electricity.
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
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