Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
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Faltermeier Johnathan E — Electricity
Faltermeier Johnathan E holds 2 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Faltermeier Johnathan E |
| Technology | Electricity |
| Patents in slice | 2 |
| Recent patents in slice | 0 |
| First year | 2015 |
| Last year | 2016 |
Representative patents
Notable publications linking Faltermeier Johnathan E to Electricity.
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Recent filings
Latest patents from Faltermeier Johnathan E in Electricity.
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
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