Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
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Matsukizono Hiroshi — Electricity
Matsukizono Hiroshi holds 10 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Matsukizono Hiroshi |
| Technology | Electricity |
| Patents in slice | 10 |
| Recent patents in slice | 0 |
| First year | 2015 |
| Last year | 2017 |
Representative patents
Notable publications linking Matsukizono Hiroshi to Electricity.
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Recent filings
Latest patents from Matsukizono Hiroshi in Electricity.
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions
US-9748399-B2 · Aug 29, 2017 · US
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