Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
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Yangtze Memory Tech Co ˜Ltd — Physics
Yangtze Memory Tech Co ˜Ltd holds 1 patent in Physics, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Yangtze Memory Tech Co ˜Ltd |
| Technology | Physics |
| Patents in slice | 1 |
| Recent patents in slice | 1 |
| First year | 2024 |
| Last year | 2024 |
Representative patents
Notable publications linking Yangtze Memory Tech Co ˜Ltd to Physics.
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Recent filings
Latest patents from Yangtze Memory Tech Co ˜Ltd in Physics.
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
US-12082408-B2 · Sep 3, 2024 · US
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