Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
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Ishida Minoru — Electricity
Ishida Minoru holds 1 patent in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Ishida Minoru |
| Technology | Electricity |
| Patents in slice | 1 |
| Recent patents in slice | 0 |
| First year | 2017 |
| Last year | 2017 |
Representative patents
Notable publications linking Ishida Minoru to Electricity.
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Recent filings
Latest patents from Ishida Minoru in Electricity.
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer
US-9564583-B2 · Feb 7, 2017 · US
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