Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
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Seoul National Univ R&Dbfoundation — Electricity
Seoul National Univ R&Dbfoundation holds 6 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Seoul National Univ R&Dbfoundation |
| Technology | Electricity |
| Patents in slice | 6 |
| Recent patents in slice | 5 |
| First year | 2022 |
| Last year | 2025 |
Representative patents
Notable publications linking Seoul National Univ R&Dbfoundation to Electricity.
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Recent filings
Latest patents from Seoul National Univ R&Dbfoundation in Electricity.
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer and switching device, and method of fabricating memory device using the same
US-12356873-B2 · Jul 8, 2025 · US
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