Semiconductor light emitting element

Patent metadata

Field	Value
Publication number	US-RE49298-E
Application number	US-201916376587-A
Country	US
Kind code	E1
Filing date	Apr 5, 2019
Priority date	Feb 1, 2007
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.

First claim

We claim:

1. A semiconductor light emitting element comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer;
a first electrode being arranged on the first conductive type semiconductor layer;
a second electrode being arranged on the second conductive type semiconductor layer; and
a light transmissive insulating film being positioned to overlap at least a part of the first electrode or the second electrode,
wherein at least the first electrode or the second electrode includes both a first layer and a second layer, the first layer and the second layer being laminated in this order from the first conductive type semiconductor layer side or from the second conductive type semiconductor layer side,
the second layer comprises an external connecting part and an electrode elongated part which extends from the external connecting part, and
the light transmissive insulating film has the similar shape as the second layer, in a plan view of the semiconductor light emitting element, and
the light transmissive insulating film is positioned between (i) the first layer of the second electrode and (ii) the second conductive type semiconductor layer, in a cross sectional view of the semiconductor light emitting element.

2. The semiconductor light emitting element according to claim 1 ,
wherein the light transmissive insulating film is located along the electrode elongated part of the second layer, in a plan view of the semiconductor light emitting element.

3. The semiconductor light emitting element according to claim 2 ,
wherein an arrangement of at least the external connecting part or the electrode elongated part is inside an area where the light transmissive insulating film is located, in a plan view of the semiconductor light emitting element.

4. The semiconductor light emitting element according to claim 2 ,
wherein an arrangement of a part of at least the external connecting part or the electrode elongated part is out of an area where the light transmissive insulating film is located, in a plan view of the semiconductor light emitting element.

5. The semiconductor light emitting element according to claim 4 ,
wherein the first layer and the second layer are laminated outside the light transmissive insulating film.

6. The semiconductor light emitting element according to claim 1 ,
a width of the electrode elongated part is formed to be narrower than a width of the light transmissive insulating film, in a plan view of the semiconductor light emitting element.

7. The semiconductor light emitting element according to claim 1 ,
wherein the first electrode and the external connecting part of the second electrode are arranged diagonally, in a plan view of the semiconductor light emitting element.

8. The semiconductor light emitting element according to claim 1 ,
wherein the first conductive type semiconductor layer is an n-type layer, and the second conductive type semiconductor layer is a p-type layer, respectively.

9. The semiconductor light emitting element according to claim 1 ,
further comprising a substrate on which the first conductive type semiconductor layer and the second conductive type semiconductor layer forming a semiconductor structure is are depositedthereon,
wherein a recess/protrusion structure is formed between the semiconductor structure and the substrate.

10. The semiconductor light emitting element according to claim 1 ,
wherein the light transmissive insulating film is positioned between the second conductive type semiconductor layer and the second layer of the second electrode, in a cross sectional view of the semiconductor light emitting element.

11. The semiconductor light emitting element according to claim 1 ,
wherein a thickness of the first layer is smaller than a thickness of the light transmissive insulating film, in a cross sectional view of the semiconductor light emitting element.

12. The semiconductor light emitting element according to claim 1 ,
wherein the first layer includes Indium Tin Oxide.

13. The semiconductor light emitting element according to claim 1 ,
wherein the second layer includes Au.

14. A semiconductor light emitting element comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer;
a first electrode being arranged on the first conductive type semiconductor layer;
a second electrode being arranged on the second conductive type semiconductor layer; and
a light transmissive insulating film being positioned to overlap at least a part of the first electrode or the second electrode,
wherein, the light transmissive insulating film has a larger film thickness at an inner area than a film thickness at a perimeter area, in a cross sectional view of the semiconductor light emitting element,
at least the first electrode or the second electrode includes both a first layer and a second layer, the first layer and the second layer being laminated in this order from the first conductive type semiconductor layer or from the second conductive type semiconductor layer,
the second layer comprises an external connecting part, and
the external connecting part is positioned to overlap at least a part of the light transmissive insulating film in a plan view of the semiconductor light emitting element.

15. The semiconductor light emitting element according to claim 14 ,
wherein the first electrode and the second electrode are arranged on a same plane side of the semiconductor structure, in a plan view of the semiconductor light emitting element.

16. The semiconductor light emitting element according to claim 14 ,
wherein the first conductive type semiconductor layer is an n-type layer, and the second conductive type semiconductor layer is a p-type layer, respectively.

17. The semiconductor light emitting element according to claim 1, wherein:
the first layer comprises Indium Tin Oxide, each of the first conductive type semiconductor layer and the second conductive type semiconductor layer comprises a nitride gallium-based compound semiconductor material represented by a general formula InxAly Ga 1-x-y N (wherein 0≤x≤1, 0≤y≤1, and 0≤x+y≤1), the light transmissive insulating film comprises SiO 2 , and the second layer comprises Au.

18. The semiconductor light emitting element according to claim 1,
wherein an outer periphery of the external connecting part is at least partially inside the area where the light transmissive insulating film is located, in a plan view of the semiconductor light emitting element.

19. The semiconductor light emitting element according to claim 1,
wherein an outer periphery of the electrode elongated part, which includes opposing elongated outer edges of the second layer, is at least partially inside an area where the light transmissive insulating film is located, in a plan view of the semiconductor light emitting element.

20. The semiconductor light emitting element according to claim 1,
wherein an outer periphery of the external connecting part is entirely inside the area where the light transmissive insulating film is located, in a plan view of the semiconductor light emitting element.

21. The semiconductor light emitting element according to claim 1,
wherein an outer periphery of the electrode elongated part, which includes opposing elongated outer edges of the second layer, is entirely inside an area where the light transmissive insulating film is located, in a plan view of the semiconductor light

Assignees

• Nichia Corp

Inventors

• Sano Masahiko
• Sakamoto Takahiko
• Emura Keiji
• Kadan Katsuyoshi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title