Package of light emitting diode and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-RE48617-E
Application number	US-201815986251-A
Country	US
Kind code	E1
Filing date	May 22, 2018
Priority date	Jan 26, 2006
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

First claim

What is claimed is:

1. A package of a semiconductor light emitting diode, the package comprising:
a base layer;
a semiconductor light emitting diode chip on the base layer;
a lead frameat least two lead frames electrically connected to the semiconductor light emitting diode chip;
a first portion of a reflective coating layer directly on the lead frame at least two lead frames; and
a molding material covering the semiconductor light emitting diode chip in a predetermined shape,
wherein a bottom surface of a second portion of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,
wherein each top surface of the at least two lead frames are a same height,
wherein each bottom surface of the at least two lead frames are lower than a top surface of the semiconductor light emitting diode chip,
wherein the lead frame at least one of the at least two lead frames includes at least one end portion that is not covered with the reflective coating layer, the at least one end portion of the lead frame being adjacent to the semiconductor light emitting diode chip,
wherein a the bottom surface of the second portion of the reflective coating layer is substantially parallel to a top surface of the base layer,
wherein a thickness from the bottom surface of the second portion of the reflective coating layer to a topmost surface of the second portion of the reflective coating layer is thinner than a thickness from the bottom surface of the semiconductor light emitting diode chip to a topmost surface of the semiconductor light emitting diode chip, and
wherein the reflective coating lager comprises a white resin including at least one of titanium oxide, calcium carbonate, or barium sulfate, and zinc oxide
wherein an uppermost portion of the molding material covering the semiconductor light emitting diode chip is disposed higher than an uppermost portion of the reflective coating layer,
wherein the molding material directly contacts at least a portion of the reflective coating layer,
wherein a bottommost surface of the reflective coating layer is positioned higher than a topmost surface of the semiconductor light emitting diode chip,
wherein a contact surface between the reflective coating layer and the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip,
wherein the bottommost surface of the reflective coating layer is positioned higher than topmost surfaces of the at least two lead frames, and
wherein the topmost surfaces of the at least two lead frames are positioned higher than the topmost surface of the semiconductor light emitting diode chip.

2. The package according to claim 1 , wherein the base layer comprises a metal.

3. The package according to claim 1 , further comprising:
an insulating layer on the base layer, wherein the insulating layer comprises a flame retardant-resin.

4. The package according to claim 1 , wherein ends of the lead frame at least two lead frames and ends of the reflective coating layer are aligned with each other.

5. The package according to claim 1 , wherein ends of the reflective coating layer and base layer are aligned with each other.

6. The package according to claim 1 , wherein an entire top surface of the base layer is substantially flat.

7. The package according to claim 1 , wherein the bottom surface of the second portion of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

8. A display device comprising:
a package of a semiconductor light emitting diode, the package including a base layer;
a semiconductor light emitting diode chip on the base layer;
a lead frameat least two lead frames electrically connected to the semiconductor light emitting diode chip;
a first portion of a reflective coating layer directly on the lead framethe at least two lead frames; and
a molding material covering the semiconductor light emitting diode chip in a predetermined shape,
wherein a bottom surface of a second portion of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,
wherein each top surface of the at least two lead frames are a same height,
wherein each bottom surface of the at least two lead frames are lower than a top surface of the semiconductor light emitting diode chip,
wherein the lead frame at least one of the two lead frames includes at least one end portion that is not covered with the reflective coating layer, the at least one end portion of the lead frame being adjacent to the semiconductor light emitting diode chip,
wherein a the bottom surface of the second portion of the reflective coating layer is substantially parallel to a top surface of the base layer,
wherein a thickness from the bottom surface of the second portion of the reflective coating layer to a topmost surface of the second portion of the reflective coating layer is thinner than a thickness from the bottom surface of the semiconductor light emitting diode chip to a topmost surface of the semiconductor light emitting diode chip, and
wherein the reflective coating layer comprises a white resin including at least one of titanium oxide, calcium carbonate, or barium sulfate, and zinc oxide
wherein an uppermost portion of the molding material covering the semiconductor light emitting diode chip is disposed higher than an uppermost portion of the reflective coating layer,
wherein the molding material directly contacts at least a portion of the reflective coating layer,
wherein a bottommost surface of the reflective coating layer is positioned higher than a topmost surface of the semiconductor light emitting diode chip,
wherein a contact surface between the reflective coating layer and the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip,
wherein the bottommost surface of the reflective coating layer is positioned higher than topmost surfaces of the at least two lead frames, and
wherein the topmost surfaces of the at least two lead frames are positioned higher than the topmost surface of the semiconductor light emitting diode chip.

9. The display device according to claim 8 , wherein the base layer comprises a metal.

10. The display device according to claim 8 , the package further comprising:
an insulating layer on the base layer and wherein the insulating layer comprises a flame retardant-4 resin.

11. The display device according to claim 8 , wherein ends of the lead frame at least two lead frames and ends of the reflective coating layer are aligned with each other.

12. The display device according to claim 8 , wherein ends of the reflective coating layer and base layer are aligned with each other.

13. The display device according to claim 8 , wherein an entire top surface of the base layer is substantially flat.

14. The display device according to claim 8 , wherein the bottom surface of the second portion of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

15. The package according to claim 1, wherein a topmost surface of one of the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

16. The package according to claim 1, wherein a surface of the reflective coating layer is not corresponded to a side surface of the semiconductor light emitting diode chip.

17. The display device accor

Assignees

• Lg Innotek Co Ltd

Inventors

• Park Bo Geun

Classifications

• H10H20/8506

  Containers · CPC title

• H10H20/8581

  characterised by their material · CPC title

• H10H20/856 Primary

  Reflecting means · CPC title

• H10H20/853 Primary

  characterised by their shape · CPC title

• B01F27/722 Primary

  the helices closely surrounded by a casing · CPC title