Memory detection method, computer device and storage medium
US-11929108-B2 · Mar 12, 2024 · US
Defective word line detection
USRE46014E · US · E1
| Field | Value |
|---|---|
| Publication number | US-RE46014-E |
| Application number | US-201414285459-A |
| Country | US |
| Kind code | E1 |
| Filing date | May 22, 2014 |
| Priority date | Nov 9, 2011 |
| Publication date | May 24, 2016 |
| Grant date | May 24, 2016 |
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Abstract
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Methods and non-volatile storage systems are provided for detecting defects in word lines. A “broken” word line defect may be detected. Information may be maintained as to which storage elements were intended to be programmed to a tracked state. Then, after programming is complete, the storage elements are read to determine which storage elements have a threshold voltage below a reference voltage level associated with the tracked state. By tracking which storage elements are in the tracked state, elements associated with other states may be filtered out such that an accurate assessment may be made as to which storage elements were under-programmed. From this information, a determination may be made whether the word line is defective. For example, if too many storage elements are under-programmed, this may indicate a broken word line.
First claim
Opening claim text (preview).
We claim: 1. A method for operating non-volatile storage, comprising: programming a group of non-volatile storage elements that are associated with a word line, including verifying that the non-volatile storage elements are programmed to a plurality of data states; maintaining information after verifying that the programming is complete that indicates which of the non-volatile storage elements were intended to be programmed to a first data state of the plurality of data states;…
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Physics · mapped topic
- G11C29/025Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent USRE46014E cover?
- Methods and non-volatile storage systems are provided for detecting defects in word lines. A “broken” word line defect may be detected. Information may be maintained as to which storage elements were intended to be programmed to a tracked state. Then, after programming is complete, the storage elements are read to determine which storage elements have a threshold voltage below a reference volta…
- Who is the assignee on this patent?
- Sandisk Technologies Inc, Sandisk Technologies Inc
- What technology area does this patent fall under?
- Primary CPC classification G11C29/025. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue May 24 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (E1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).