Electrode material for aluminum electrolytic capacitors and method for producing same
US-2024301561-A1 · Sep 12, 2024 · US
Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
USRE45481E · US · E1
| Field | Value |
|---|---|
| Publication number | US-RE45481-E |
| Application number | US-38611706-A |
| Country | US |
| Kind code | E1 |
| Filing date | Oct 14, 1996 |
| Priority date | Oct 12, 1995 |
| Publication date | Apr 21, 2015 |
| Grant date | Apr 21, 2015 |
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Abstract
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An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
First claim
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What is claimed is: 1. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element constituting an intermetallic compound of Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 2. A sputter target, consisting essentially of 0.001 to 30 at % of…
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- What does patent USRE45481E cover?
- An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, N…
- Who is the assignee on this patent?
- Ishigami Takashi, Watanabe Koichi, Nitta Akihisa, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification C22C21/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (E1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).