Organic light-emitting device

Patent metadata

Field	Value
Publication number	US-9997733-B2
Application number	US-201615173336-A
Country	US
Kind code	B2
Filing date	Jun 3, 2016
Priority date	Oct 28, 2015
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; a first emission unit and a second emission unit between the first electrode and the second electrode; and a first charge generation layer between the first emission unit and the second emission unit; wherein the first emission unit includes a first emission layer and a first inorganic buffer layer, and the second emission unit includes a second emission layer and a second inorganic buffer layer.

First claim

What is claimed is:

1. An organic light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode;
a first emission unit and a second emission unit between the first electrode and the second electrode; and
a first charge generation layer between the first emission unit and the second emission unit,
wherein the first emission unit comprises a first emission layer and a first inorganic buffer layer, and
the second emission unit comprises a second emission layer and a second inorganic buffer layer.

2. The organic light-emitting device of claim 1 , wherein:
the first emission unit further comprises a first hole injection layer between the first emission layer and the first electrode, and the first inorganic buffer layer is between the first emission layer and the first hole injection layer, and
the second emission unit further comprises a second hole injection layer between the second emission layer and the first charge generation layer, and the second inorganic buffer layer is between the second emission layer and the second hole injection layer.

3. The organic light-emitting device of claim 2 , wherein:
the first inorganic buffer layer is directly in contact with the first emission layer, and
the second inorganic buffer layer is directly in contact with the second emission layer.

4. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise a metal halide.

5. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise at least one halide compound selected from an alkali metal halide, an alkaline earth metal halide, a transition metal halide, a post-transition metal halide, and a lanthanum-based metal halide.

6. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise at least one iodide compound selected from an alkali metal iodide, an alkaline earth metal iodide, a transition metal iodide, a post-transition metal iodide, and a lanthanum-based metal iodide.

7. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise at least one iodide compound selected from a lithium (Li) iodide, a sodium (Na) iodide, a potassium (K) iodide, a rubidium (Rb) iodide, a cesium (Cs) iodide, a beryllium (Be) iodide, a magnesium (Mg) iodide, a calcium (Ca) iodide, a strontium (Sr) iodide, a barium (Ba) iodide, a ytterbium (Yb) iodide, a samarium (Sm) iodide, a copper (Cu) iodide, a thallium (Tl) iodide, a silver (Ag) iodide, a cadmium (Cd) iodide, a mercury (Hg) iodide, a tin (Sn) iodide, a lead (Pb) iodide, a bismuth (Bi) iodide, a zinc (Zn) iodide, a manganese (Mn) iodide, an iron (Fe) iodide, a cobalt (Co) iodide, a nickel (Ni) iodide, an aluminum (Al) iodide, an indium (In) iodide, a gallium (Ga) iodide, a thorium (Th) iodide, and a uranium (U) iodide.

8. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise at least one iodide compound selected from LiI, NaI, KI, RbI, CsI, BeI 2 , MgI 2 , CaI 2 , SrI 2 , BaI 2 , YbI, YbI 2 , YbI 3 , SmI 3 , CuI, TlI, AgI, CdI 2 , HgI 2 , SnI 2 , PbI 2 , BiI 3 , ZnI 2 , MnI 2 , FeI 2 , CoI 2 , NiI 2 , AlI 3 , InI 3 , GaI 3 , ThI 4 , and UI 3 .

9. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer are each formed of a metal halide.

10. The organic light-emitting device of claim 5 , wherein the first inorganic buffer layer and the second inorganic buffer layer each further comprise at least one metal.

11. The organic light-emitting device of claim 5 , wherein the first inorganic buffer layer and the second inorganic buffer layer each further comprise at least one metal selected from an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, and a lanthanum-based metal.

12. The organic light-emitting device of claim 5 , wherein the first inorganic buffer layer and the second inorganic buffer layer each further comprise at least one metal selected from Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Yb, Sm, Cu, Tl, Ag, Cd, Hg, Sn, Pb, Bi, Zn, Mn, Fe, Co, Ni, Al, In, Ga, Th, and U.

13. The organic light-emitting device of claim 5 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise a metal halide and a metal.

14. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise a halide compound of a first metal in addition to a second metal, wherein the first metal is identical to the second metal.

15. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each comprise a halide compound of a first metal in addition to a second metal, wherein the first metal is different from the second metal.

16. The organic light-emitting device of claim 1 , wherein the first inorganic buffer layer and the second inorganic buffer layer each have a thickness of about 1 nm to about 20 nm.

17. The organic light-emitting device of claim 1 , wherein the first charge generation layer comprises an n-charge generation layer and a p-charge generation layer,
wherein the n-charge generation layer comprises an n-type dopant and the p-charge generation layer comprises a p-type dopant.

18. The organic light-emitting device of claim 1 , further comprising:
a third emission unit between the first electrode and the second electrode, and
a second charge generation layer between the second emission unit and the third emission unit,
wherein the third emission unit comprises a third emission layer and a third inorganic buffer layer, and the third inorganic buffer layer comprises at least one iodide compound selected from an alkali metal iodide, an alkaline earth metal iodide, a transition metal iodide, a post-transition metal iodide, and a lanthanum-based metal iodide.

19. The organic light-emitting device of claim 1 , wherein the first emission unit further comprises a first electron transport region between the first emission layer and the first charge generation layer, and the second emission unit further comprises a second electron transport region between the second emission layer and the second electrode.

Assignees

• Samsung Display Co Ltd

Inventors

• Seo Dongkyu
• Kim Dongchan
• Kim Wonjong
• Kim Eungdo
• Lee Jihye
• Im Dahea
• Yim Sanghoon
• Cho Yoonhyeung
• Han Wonsuk

Classifications

• H01L51/0085

  Electricity · mapped topic

• H01L51/5016

  Electricity · mapped topic

• H01L51/0067

  Electricity · mapped topic

• H01L51/0081

  Electricity · mapped topic

• H01L51/0055

  Electricity · mapped topic