High power light emitting device and method of making the same

Patent metadata

Field	Value
Publication number	US-9997669-B2
Application number	US-201514820509-A
Country	US
Kind code	B2
Filing date	Aug 6, 2015
Priority date	Aug 6, 2014
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm 2 .

First claim

What is claimed is:

1. A light emitting device, comprising:
a substrate including a first lead and a second lead;
a light emitting diode disposed over the first lead of the substrate, the light emitting diode including a light emitting structure including an active layer, a first conductive-type semiconductor layer disposed over the active layer, and a second conductive type semiconductor layer, the active layer disposed over the second conductive-type semiconductor layer, wherein the light emitting diode is configured to emit near ultraviolet light; and
a wavelength conversion unit disposed over the light emitting diode,
wherein the light emitting diode includes:
at least one groove formed in the light emitting structure and exposing a portion of the first conductive-type semiconductor layer;
a first electrode disposed under the light emitting structure and electrically connected to the first conductive-type semiconductor layer exposed by the at least one groove; and
a second electrode disposed under a lower surface of the second conductive-type semiconductor layer and at least partially covered by the second conductive-type semiconductor layer, and

wherein the light emitting diode has a semi-polar or non-polar growth surface,
the wavelength conversion unit includes a multi-layered structure including a first phosphor layer and a second phosphor layer disposed over the first phosphor layer, and
the light emitting diode is configured to be driven at a current density equal to or greater than 350 mA/mm 2 .

2. The light emitting device of claim 1 , wherein the first conductive-type semiconductor layer, the second conductive-type semiconductor layer, and the active layer include a nitride based semiconductor layer and the nitride based semiconductor layer has a growth surface including an m-plane, an a-plane, or a semi-polar crystal plane.

3. The light emitting device of claim 1 , wherein the light emitting diode further includes a second electrode pad disposed over a region of the second electrode not covered by the second conductive-type semiconductor layer.

4. The light emitting device of claim 3 , wherein the first electrode is electrically connected to the first lead and the second lead is electrically connected to the second electrode pad.

5. The light emitting device of claim 1 , wherein the second electrode includes a reflective layer and a cover layer covering the reflective layer, and
a part of the second electrode not covered by the second conductive-type semiconductor layer forms a part of the cover layer.

6. The light emitting device of claim 1 , wherein the light emitting diode is configured to emit light having a peak wavelength which ranges from 380 to 420 nm.

7. The light emitting device of claim 1 , wherein the first phosphor layer includes a red phosphor and the second phosphor layer includes a cyan phosphor.

8. The light emitting device of claim 7 , wherein the first phosphor layer has an upper surface including a plurality of protrusions and depressions.

9. The light emitting device of claim 1 , wherein the wavelength conversion unit further includes a third phosphor layer disposed over the second phosphor layer, and
the first, second and third phosphor layers include a red phosphor, a green phosphor, and a blue phosphor, respectively.

10. The light emitting device of claim 9 , wherein the first phosphor layer, the second phosphor layer, or both of the first and second phosphor layers include a plurality of protrusions and depressions formed on an upper surface thereof.

11. The light emitting device of claim 1 , further including:
a reflector disposed over the substrate and surrounding a side of the light emitting diode,
wherein the wavelength conversion unit has a plate shape and is supported by the reflector.

12. The light emitting device of claim 1 , wherein the wavelength conversion unit is spaced apart from the light emitting diode by a distance that is 0.5 to 5.0 times a thickness of the light emitting diode.

13. The light emitting device of claim 1 , further including:
an encapsulation unit covering the light emitting diode,
wherein the wavelength conversion unit is disposed over the encapsulation unit.

14. The light emitting device of claim 1 , wherein the substrate further includes an upper insulating substrate and a lower insulating substrate,
the first lead includes a first upper conductive pattern, a first intermediate conductive pattern, a first lower conductive pattern, a first upper via, and a first lower via,
the second lead includes a second upper conductive pattern, a second intermediate conductive pattern, a second lower conductive pattern, a second upper via, and a second lower via,
the first upper conductive pattern and the second upper conductive pattern are disposed over the upper insulating substrate and being spaced apart from each other, the first intermediate conductive pattern and the second intermediate conductive pattern are interposed between the upper insulating substrate and the lower insulating substrate and being spaced apart from each other,
the first upper via and the first lower via penetrate through the upper insulating substrate and the lower insulating substrate, respectively, to form an electrical connection among the first upper conductive pattern, the first intermediate conductive pattern, and the first lower conductive pattern, and
the second upper via and the second lower via penetrate through the upper insulating substrate and the lower insulating substrate, respectively, to form an electrical connection among the second upper conductive pattern, the second intermediate conductive pattern, and the second lower conductive pattern.

15. The light emitting device of claim 14 , wherein the substrate further includes a heat sink lead,
the heat sink lead includes an upper heat sink pattern, a lower heat sink pattern, and a heat sink via, and
the upper heat sink pattern is interposed between the upper insulating substrate and the lower insulating substrate, the lower heat sink pattern is disposed under the lower surface of the lower insulating substrate, and the heat sink via penetrates through the lower insulating substrate to form a thermal connection between the upper heat sink pattern and the lower heat sink pattern.

16. The light emitting device of claim 14 , further including:
a resin unit covering a side of the light emitting diode.

17. The light emitting device of claim 14 , further including:
a light transmitting layer at least partially covering the light emitting diode,
wherein the wavelength conversion unit is disposed over the light transmitting layer and spaced apart from the light emitting diode.

18. The light emitting device of claim 1 , wherein the at least one groove has an inclined side.

19. The light emitting device of claim 3 , wherein the first electrode is disposed under the light emitting structure and extends under the second electrode pad.

20. The light emitting device of claim 1 , further including an insulating layer disposed between first electrode and the second electrode.

Assignees

• Seoul Viosys Co Ltd
• Seoul Semiconductor Co Ltd

Inventors

• Im Chang Ik
• Takeya Motonobu
• Lee Chung Hoon
• Lim Michael

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/01515

  Forming coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title