Semiconductor device
US-2024290673-A1 · Aug 29, 2024 · US
US9997489B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9997489-B2 |
| Application number | US-201414902183-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 2, 2014 |
| Priority date | Jul 3, 2013 |
| Publication date | Jun 12, 2018 |
| Grant date | Jun 12, 2018 |
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Official abstract text for this publication.
A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention.
Opening claim text (preview).
Thus, having described the invention, what is claimed is: 1. A lead having a metal core, a dielectric layer at least partially surrounding the metal core, the dielectric being only partially surrounded by a ground connectable metal coating, wherein the lead further has at least one vapor barrier coating protecting areas that are not covered by metal. 2. The lead of claim 1 , wherein the lead includes additional metal layers and/or additional dielectric layers. 3. The lead of claim 1 , wherein the lead has multiple layers of dielectric of varying thickness, which are separated by thin metal layers, with the outermost layer being connected to ground. 4. The lead of claim 1 , wherein a high performance dielectric providing a superior vapor barrier and/or oxygen degradation resistance is thinly deposited over a thick layer of another dielectric material. 5. A die package comprising a die having a plurality of connection pads; a die substrate supporting a plurality of connection elements; and one or more leads according to any of the preceding claims connected between the die and the die substrate. 6. The die package of any of claim 5 , wherein the die is overmolded, cured, and/or singulated for use. 7. The lead of claim 1 , including an additional coating to promote adhesion to mold compounds. 8. A lead having a metal core, a dielectric layer at least partially surrounding the metal core, the dielectric being only partially surrounded by a ground connectable metal coating, wherein the lead further has at least one vapor barrier coating covering areas that are not covered by metal.
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
Encapsulations, e.g. protective coatings · CPC title
changes in dispositions · CPC title
changes in structures or sizes · CPC title
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