EUV-mirror, optical system with EUV-mirror and associated operating method

Patent metadata

Field	Value
Publication number	US-9997268-B2
Application number	US-201615262272-A
Country	US
Kind code	B2
Filing date	Sep 12, 2016
Priority date	Mar 23, 2011
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

An EUV mirror ( 1000 ) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate ( 1020 ) and a multilayer arrangement ( 1030 ) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer ( 1040 ) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

First claim

The invention claimed is:

1. A mirror for extreme ultraviolet (EUV) radiation comprising a mirror element which forms a mirror surface of the mirror, and which comprises:
a substrate,
a multilayer arrangement applied on the substrate and having a reflective effect with respect to the EUV radiation, said multilayer arrangement comprising:
a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material,
an active layer arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness of which active layer alters by action of an electric field; and
an electrode arrangement configured to generate the electric field acting on the active layer,

wherein the electrode arrangement, for driving the active layer has an electrode layer, wherein the electrode layer is a structured layer electrode and is subdivided into a plurality of electrode segments which lie alongside one another and are electrically insulated from one another, and
wherein each of the electrode segments covers only a fraction of a total cross-sectional area of the mirror element.

2. The EUV mirror according to claim 1 , wherein each of the electrode segments covers less than 50% and more than 1% of the total area of the structured layer electrode.

3. The EUV mirror according to claim 1 , wherein the electrode arrangement comprises a common electrode opposite to the structured layer electrode, the common electrode extending over at least a plurality of electrode segments.

4. The EUV mirror according to claim 3 , wherein the common electrode is formed on a radiation incidence side of the active layer, opposite to the substrate side of the active layer.

5. The EUV mirror according to claim 4 , wherein the common electrode arranged on the radiation incidence side comprises a plurality of single layers stacked on top of each other to form a multilayer.

6. The EUV mirror according to claim 1 , wherein the mirror element is circular in cross section and the electrode layer is an overall circular structured layer electrode subdivided into the electrode segments each covering a predefined angular range, whereby a reflection behavior of the mirror element varies circumferentially in a predetermined manner.

7. The EUV mirror according to claim 1 , wherein the structured electrode has a plurality of polygonal electrode segments forming a checkered pattern.

8. The EUV mirror according to claim 1 , wherein the multilayer arrangement comprises a first layer group arranged between the radiation entrance surface and the active layer and having a first number N 1 of layer pairs, and a second layer group arranged between the active layer and the substrate and having a second number N 2 of layer pairs, wherein the numbers N 1 and N 2 of layer pairs of the first layer group and of the second layer group are configured such that, for at least one angle of incidence of the radiation impinging on the radiation entrance surface, the first layer group transmits a portion of the incident radiation through the active layer to the second layer group and the radiation reflected by the multilayer arrangement contains a first portion reflected by the first layer group and a second portion reflected by the second layer group.

9. The EUV mirror according to claim 8 , wherein the active layer, absent the electric field, has a layer thickness configured such that for a reference angle of incidence of the incident radiation a reflectivity of the multilayer arrangement is altered by a maximum of 20% when the active layer is subjected to the electric field.

10. The EUV mirror according to claim 8 , wherein the piezoelectrically active layer material substantially consists of barium titanate (BaTiO 3 ).

11. The EUV mirror according to claim 8 , wherein at least one of the following conditions holds true:
10< N 1<30  (1)

15< N 2<50  (2)

30<( N 1+ N 2)<70 and N 1>10 and N 2>10  (3)

N 1≤ N 2  (4)

z≥ 2 nm  (5)

z≤ 35 nm  (6)

Δ z≥ 0.1 nm  (7)

0.15 nm≤Δ z≤ 2 nm,  (8)

where z is the layer thickness of the active layer and Δz is a change in layer thickness produced by the generated electric field.

12. The EUV mirror according to claim 1 , wherein the multilayer arrangement has a multiplicity of active layers composed of the piezoelectrically active layer material, wherein the active layers are respectively arranged alternatively with non-active layers.

13. The EUV mirror according to claim 12 , wherein the active layer material consists predominantly of a ceramic material of the type (Li, Na, K)(Nb, Ti)O 3 .

14. The EUV mirror according to claim 12 , wherein individual non-active layers formed by electrically conductive, non-piezoelectrically active layer material are connected to individual outputs of a voltage source, such that electric field strengths affecting the different active layers are set individually.

15. The EUV mirror according to claim 1 , wherein the multilayer arrangement has a third layer group arranged between the radiation entrance surface and the active layer and having a third number N 3 of layer pairs, wherein the third number N 3 is selected such that, for at least one angle of incidence of the radiation impinging on the radiation entrance surface, the third layer group reflects or absorbs the incident radiation before the incident radiation reaches the active layer.

16. The EUV mirror according to claim 1 , wherein the electrode arrangement further comprises a second electrode layer, and the active layer is arranged between the electrode layers.

17. The EUV mirror according to claim 1 , wherein the active layer is a PLD layer applied by pulsed laser deposition (PLD).

18. The EUV mirror according to claim 1 , wherein at least one of:
at least one electrode layer is a PLD layer applied by pulsed laser deposition (PLD), and
at least one electrode layer consists of an electrically conductive ceramic material.

19. The EUV mirror according to claim 1 , wherein the piezoelectrically active layer material is selected from the group consisting of: Ba(Sr,Zr)TiO 3 , Bi(Al,Fe)O 3 , (Bi,Ga)O 3 , (Bi,Sc)O 3 , CdS, (Li,Na, K)(Nb,Ta)O 3 , Pb(Cd,Co,Fe,In,Mg,Ni,Sc,Yb,Zn,Zr) (Nb,W,Ta,Ti)O 3 , ZnO, ZnS or contains at least one material of this group in combination with at least one other material.

20. An optical system comprising at least one EUV mirror as claimed in claim 1 .

21. The optical system according to claim 20 , wherein the optical system is an illumination system or a projection lens of a micrography projection exposure apparatus.

22. A method for operating an optical system comprising at least one EUV mirror as claimed in claim 1 , comprising varying a local reflectivity distribution over the mirror surface of the mirror element in a location-dependent manner by selectively driving at least individual ones of the active layers of the mirror elements via the corresponding ones of the electrode segments of the structured layer electrode.

Assignees

• Zeiss Carl Smt Gmbh

Inventors

• Dinger Udo
• Bijkerk Frederik
• Bayraktar Muharrem
• Dier Oliver

Classifications

• G03F7/702

  Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G02B5/0891

  Ultraviolet [UV] mirrors (apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06) · CPC title

• G03F7/70075

  Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection · CPC title

• G21K1/062 Primary

  Devices having a multilayer structure · CPC title