Polymer for preparing resist underlayer film, resist underlayer film composition containing the polymer and method for manufacturing semiconductor device using the composition

Patent metadata

Field	Value
Publication number	US-9996007-B2
Application number	US-201615207817-A
Country	US
Kind code	B2
Filing date	Jul 12, 2016
Priority date	Jul 14, 2015
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process.

First claim

What is claimed is:

1. A polymer for preparing a resist underlayer film comprising:
a repeating unit represented by Chemical Formula 1 below:

in Chemical Formula 1,
Ar is

Z 1 to Z 4 are each independently C═O, NR a , O, S or CR b R c ; R a to R c are each independently hydrogen, (C1-C10)alkyl, halogen, (C3-C10)cycloalkyl, or (C6-C20)aryl, and the alkyl, cycloalkyl, and aryl may be further substituted with one or more substituents selected from the group consisting of halogen, (C1-C10)alkyl, halo(C1-C10)alkyl, (C3-C10)cycloalkyl, and (C6-C20)aryl;
Ar 1 and Ar 2 are each independently (C6-C30)arylene;
L is

Ar 3 and Ar 4 are each independently (C6-C30)arylene;
Ar 5 is trivalent (C6-C30)arylene;
Ar 6 is (C6-C30)aryl;
the arylene of Ar 3 , Ar 4 and Ar 5 , and the aryl of Ar 6 may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl, (C6-C20)aryl, (C1-C10)alkoxy, (C6-C20)aryloxy, (C1-C10)alkyl(C6-C20)aryl and (C6-C20)aryl(C1-C10)alkyl,
R is hydrogen, (C1-C20)alkyl, (C3-C10)cycloalkyl or (C6-C20)aryl, and the alkyl, cycloalkyl, or aryl of R may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl and (C6-C20)aryl;
w is an integer of 1 to 5;
u is an integer of 0 or 1; and
the heteroaryl and the heterocycloalkyl include one or more heteroatoms selected from B, N, O, S, P(═O), Si, Se and P.

2. The polymer for preparing a resist underlayer film of claim 1 , wherein the polymer includes a repeating unit represented by Chemical Formula 2, 3, or 4 below:

in Chemical Formula 2, 3, or 4, Ar, Ar 1 , Ar 2 , Ar 3 , Ar 4 , Ar 5 , Ar 6 , R, w and u are the same as defined in Chemical Formula 1 above of claim 1 .

3. The polymer for preparing a resist underlayer film of claim 2 , wherein Ar 3 and Ar 4 are each independently phenylene, naphthylene, biphenylene, fluorenylene, triphenylene, anthrylene, pyrenylene, chrysenylene or naphthacenylene; Ar 5 is trivalent phenylene, naphthylene, biphenylene, fluorenylene, triphenylene, anthrylene, pyrenylene, chrysenylene or naphthacenylene; Ar 6 is phenyl, naphthyl, biphenyl, fluorenyl, triphenyl, anthryl, pyrenyl, chrysenyl or naphthacenyl; R is hydrogen, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, phenyl, naphthyl, biphenyl, terphenyl, fluorenyl, phenanthrenyl, anthracenyl, triphenylenyl, pyrenyl, chrysenyl, naphthacenyl, benzyl, naphthylmethyl, anthrylmethyl, pyrenylmethyl, triphenylmethyl or tolyl; w is an integer 1 or 2; and u is an integer of 0 or 1.

4. The polymer for preparing a resist underlayer film of claim 1 , wherein the polymer has a weight average molecular weight of 500 or more.

5. A resist underlayer film composition comprising:
a polymer for preparing a resist underlayer film including a repeating unit represented by Chemical Formula 1 below; and
an organic solvent:

in Chemical Formula 1,
Ar is

Z 1 to Z 4 are each independently C═O, NR a , O, S or CR b R c ; R a to R c are each independently hydrogen, (C1-C10)alkyl, halogen, (C3-C10)cycloalkyl, or (C6-C20)aryl, and the alkyl, cycloalkyl, and aryl may be further substituted with one or more substituents selected from the group consisting of halogen, (C1-C10)alkyl, halo(C1-C10)alkyl, (C3-C10)cycloalkyl, and (C6-C20)aryl;
Ar 1 and Ar 2 are each independently (C6-C30)arylene;
L is

Ar 3 and Ar 4 are each independently (C6-C30)arylene;
Ar 5 is trivalent (C6-C30)arylene;
Ar 6 is (C6-C30)aryl;
the arylene of Ar 3 , Ar 4 and Ar 5 , and the aryl of Ar 6 may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl, (C6-C20)aryl, (C1-C10)alkoxy, (C6-C20)aryloxy, (C1-C10)alkyl(C6-C20)aryl and (C6-C20)aryl(C1-C10)alkyl,
R is hydrogen, (C1-C20)alkyl, (C3-C10)cycloalkyl or (C6-C20)aryl, and the alkyl, cycloalkyl, or aryl of R may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl and (C6-C20)aryl;
w is an integer of 1 to 5;
u is an integer of 0 or 1; and
the heteroaryl and the heterocycloalkyl include one or more heteroatoms selected from B, N, O, S, P(═O), Si, Se and P.

6. The resist underlayer film composition of claim 5 , wherein the polymer for preparing a resist underlayer film includes a repeating unit represented by Chemical Formula 2, 3 or 4 below:

in Chemical Formula 2, 3, or 4, Ar, Ar 1 , Ar 2 , Ar 3 , Ar 4 , Ar 5 , Ar 6 , R, w and u are the same as defined in Chemical Formula 1 above of claim 5 .

7. The resist underlayer film composition of claim 5 , wherein the polymer for preparing a resist underlayer film including the repeating unit represented by Chemical Formula 1 has an amount of 0.5 to 50 wt % and the organic solvent has an amount of 50 to 99.5 wt %, based on total amount of the resist underlayer film composition.

8. The resist underlayer film composition of claim 5 , wherein the organic solvent is at least one selected from cyclohexanone, 2-heptanone, propyleneglycol monomethyl ether, propyleneglycol monomethyl acetate, propyleneglycol monomethyl ether acetate, gamma-butyrolactone, ethyl lactate, dimethyl sulfoxide, dimethyl acetamide, and N-methyl pyrrolidone.

9. The resist underlayer film composition of claim 5 , further comprising at least one additive selected from crosslinking agents, acid catalysts, acid generators, antifoaming agents, and surfactants.

10. The resist underlayer film composition of claim 9 , wherein the crosslinking agent is at least one selected from compounds represented by Chemical Formulas 5 to 11 below:

in Chemical Formula 7, R 21 and R 22 are each independently hydroxy or (C1-C3)alkoxy, and R 23 is (C1-C10)alkyl,

in Chemical Formula 9, R 24 , R 25 , R 26 and R 27 are each independently hydroxy or (C1-C3)alkoxy, and R 28 and R 29 are each independently hydrogen, (C1-C10)alkyl or halo(C1-C10)alkyl,

in Chemical Formula 10, R 30 , R 31 , R 32 and R 33 are each independently hydroxy or (C1-C3)alkoxy,

Assignees

• Sk Innovation Co Ltd
• Sk Global Chemical Co Ltd

Inventors

• Jung Min Ho
• Shim Yu Na
• Lee Kyun Phyo
• Ham Jin Su
• Hwang Soo Young

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2042

  using lasers · CPC title