Scanning electron microscope and sample observation method

Patent metadata

Field	Value
Publication number	US-9991092-B2
Application number	US-201013387183-A
Country	US
Kind code	B2
Filing date	Jul 30, 2010
Priority date	Aug 7, 2009
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning conditioHn according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

First claim

The invention claimed is:

1. A scanning electron microscope which forms an image of a scanned region by scanning a two-dimensional region on a sample with an electron beam, comprising:
means which provides candidates of recommended scanning methods and which acquires images of said sample using said candidates of recommended scanning methods,
wherein the scanning electron microscope suppresses a number of injected electrons injected on said sample by said electron beam per individual single line scanned in a direction of said scanning by determining a probe current and a scan speed of scanning said individual single lines by said electron beam such that a scanning line density, which is a charge amount injected per unit of length on the sample by scanning of said electron beam, for each individual single line scanned by the electron beam on said sample is a predetermined value or less based on one or more electric characteristics of said sample derived from said images,
wherein said sample is scanned in individual single lines by the electron beam based on the determined probe current and scan speed, and
wherein a sample parallel edge intensity and a sample parallel to perpendicular edge intensity ratio is measured and the scanning line density is selected to be said predetermined value or less.

2. The scanning electron microscope according to claim 1 , further comprising:
means which inputs information of said sample, determines whether an optimization procedure for a scanning strategy of said electron beam is necessary, provides candidate scanning method(s) to said sample upon determining the optimization procedure is necessary, and acquires images of said sample with the candidate scanning method(s), wherein
at least one of the following information is derived from said images taken by said scanning electron microscope: (1) brightness of the image(s), (2) contrast of edge(s) of features of said sample, (3) uniformity of the brightness of said images, (4) uniformity of said contrast of said edge(s) in said image(s), and a signal-to-noise ratio of said image(s).

3. The scanning electron microscope according to claim 1 , wherein when the electric characteristics of said sample and/or the candidates of recommended scanning methods are stored, and
wherein said candidates of recommended scanning methods for said electron beam are read out when the information concerning to said sample is input, and said electron beam scans over said sample using said scanning method(s) automatically and acquires images.

4. The scanning electron microscope according to claim 1 , wherein
a sequence of plural spatially separated line positions on said sample scanned by said electron beam are controlled.

5. The scanning electron microscope according to claim 1 , wherein
said electric characteristic further includes a charging relaxation time constant of said sample calculated based on a temporal change of an intensity of secondary charged particles emitted from said sample by radiating the electron beam to said sample.

6. The scanning electron microscope according to claim 1 , wherein said predetermined value is of said scanning line density is 7.2×10 −19 (C/nm).

7. The scanning electron microscope according to claim 1 , wherein said predetermined value is of said scanning line density is 3.52×10 −19 (C/nm).

8. The scanning electron microscope according to claim 1 , wherein the scan speed is increased from a normal scan speed.

9. The scanning electron microscope according to claim 1 , wherein a focal point or an astigmatism correction amount is calculated and the calculation result is fed back to a charged particle optical system.

10. A sample observation method in which an image of a scanned region is formed by scanning a two-dimensional region on a sample with the electron beam, comprising the steps of:
providing candidates of recommended scanning methods and acquiring images of said sample using said candidates of recommended scanning methods; and
suppressing a number of injected electrons injected on the sample by said electron beam per individual single line scanned in a direction of said scanning by determining a probe current and a scan speed of scanning said individual single lines by said electron beam such that a scanning line density, which is a charge amount injected per unit of length on the sample by scanning of said electron beam, for each individual single line scanned by the electron beam on the sample is a predetermined value or less based on one or more electric characteristics of said sample derived from said images;
scanning said sample in individual single lines by the electron beam based on the determined probe current and scan speed and
wherein a sample parallel edge intensity and a sample parallel to perpendicular edge intensity ratio is measured and the scanning line density is selected to be said predetermined value or less.

11. The sample observation method according to claim 10 , further comprising:
steps which input information of said sample, determine whether an optimization procedure for a scanning strategy of said electron beam is necessary, provide candidate scanning method(s) to said sample upon determining the optimization procedure is necessary, acquire images of said sample with the candidate scanning method(s), wherein
at least one of the following information is derived from said images taken by said scanning electron microscope: (1) brightness of the image(s), (2) contrast of edge(s) of features of said sample, (3) uniformity of the brightness of said images, (4) uniformity of said contrast of said edge(s) in said image(s), and a signal-to-noise ratio of said image(s).

12. The sample observation method according to claim 10 , wherein when the electric characteristics of said sample and/or the candidates of recommended scanning methods are stored, and
wherein said candidates of recommended scanning methods for said electron beam are read out when the information concerning to said sample is input, and said electron beam scans over said sample using said scanning method(s) automatically and acquires images.

13. The sample observation method according to claim 10 , wherein a sequence of a plural spatially separated line positions on said sample scanned by said electron beam are controlled.

14. The sample observation method according to claim 10 , wherein said electric characteristic further includes is a charging relaxation time constant of said sample calculated based on a temporal change of an intensity of secondary charged particles emitted from said sample by radiating the electron beam to said sample.

15. The sample observation method according to claim 10 , wherein said predetermined value is of said scanning line density is 7.2×10 −19 (C/nm).

16. The sample observation method according to claim 10 , wherein said predetermined value is of said scanning line density is 3.52×10 −19 (C/nm).

17. The sample observation method according to claim 10 , wherein the scan speed is increased from a normal scan speed.

18. The sample observation method according to claim 10 , wherein a focal point or an astigmatism correction amount is calculated and the calculated result is fed back to a charged particle optical system.

19. A scanning electron microscope which forms an image of a scanned region by scanning a two-dimensional region on a sample with an electron beam, comprising:
a GUI;
sample information input means which inputs information relating to a sample; and
display means which displays candidates of rec

Assignees

• Cheng Zhaohui
• Koyama Hikaru
• Kimura Yoshinobu
• Shinada Hiroyuki
• Komuro Osamu
• Hitachi High Tech Corp

Inventors

• Cheng Zhaohui
• Koyama Hikaru
• Kimura Yoshinobu
• Shinada Hiroyuki
• Komuro Osamu

Classifications

• H01J2237/2803

  characterised by the imaging method · CPC title

• H01J37/28 Primary

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title