Semiconductor device

US9990894B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9990894-B2
Application numberUS-201715396862-A
CountryUS
Kind codeB2
Filing dateJan 3, 2017
Priority dateSep 9, 2010
Publication dateJun 5, 2018
Grant dateJun 5, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device where delay or distortion of a signal output to a gate signal line in a selection period is reduced is provided. The semiconductor device includes a gate signal line, a first and second gate driver circuits which output a selection signal and a non-selection signal to the gate signal line, and pixels electrically connected to the gate signal line and supplied with the two signals. In a period during which the gate signal line is selected, both the first and second gate driver circuits output the selection signal to the gate signal line. In a period during which the gate signal line is not selected, one of the first and second gate driver circuits outputs the non-selection signal to the gate signal line, and the other gate driver circuit outputs neither the selection signal nor the non-selection signal to the gate signal line.

First claim

Opening claim text (preview).

What is claimed is: 1. A display device comprising: a first gate driver circuit; a second gate driver circuit; a pixel portion between the first gate driver circuit and the second gate driver circuit; and a gate line between the first gate driver circuit and the second gate driver circuit, wherein the first gate driver circuit comprises first to sixth transistors, wherein the second gate driver circuit comprises seventh to twelfth transistors, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the one of the source and the drain of the first transistor is electrically connected to the gate line, wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor, wherein the one of the source and the drain of the third transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to one of a source and a drain of the sixth transistor, wherein the one of the source and the drain of the fifth transistor is electrically connected to a gate of the third transistor, wherein the other of the source and the drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the second transistor is electrically connected to a second wiring, wherein the other of the source and the drain of the third transistor is electrically connected to a third wiring, wherein the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the fifth transistor, wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the fifth transistor, wherein the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the sixth transistor, wherein a gate of the first transistor is electrically connected to a gate of the fourth transistor, wherein the gate of the first transistor is electrically connected to a gate of the sixth transistor, wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the eighth transistor, wherein the one of the source and the drain of the seventh transistor is electrically connected to the gate line, wherein one of a source and a drain of the ninth transistor is electrically connected to one of a source and a drain of the tenth transistor, wherein the one of the source and the drain of the ninth transistor is electrically connected to a gate of the eighth transistor, wherein one of a source and a drain of the eleventh transistor is electrically connected to one of a source and a drain of the twelfth transistor, wherein the one of the source and the drain of the eleventh transistor is electrically connected to a gate of the ninth transistor, wherein the other of the source and the drain of the seventh transistor is electrically connected to a fourth wiring, wherein the other of the source and the drain of the eighth transistor is electrically connected to a fifth wiring, wherein the other of the source and the drain of the ninth transistor is electrically connected to a sixth wiring, wherein the other of the source and the drain of the ninth transistor is electrically connected to the other of the source and the drain of the eleventh transistor, wherein the other of the source and the drain of the ninth transistor is electrically connected to a gate of the eleventh transistor, wherein the other of the source and the drain of the tenth transistor is electrically connected to the other of the source and the drain of the twelfth transistor, wherein a gate of the seventh transistor is electrically connected to a gate of the tenth transistor, and wherein the gate of the seventh transistor is electrically connected to a gate of the twelfth transistor. 2. The display device according to claim 1 , wherein the first wiring is electrically connected to the fourth wiring. 3. The display device according to claim 1 , wherein the second wiring is electrically connected to the fifth wiring. 4. A display device comprising: a first gate driver circuit; a second gate driver circuit; a pixel portion between the first gate driver circuit and the second gate driver circuit; and a gate line between the first gate driver circuit and the second gate driver circuit, wherein the first gate driver circuit comprises first to sixth transistors, wherein the second gate driver circuit comprises seventh to twelfth transistors, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the one of the source and the drain of the first transistor is electrically connected to the gate line, wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor, wherein the one of the source and the drain of the third transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to one of a source and a drain of the sixth transistor, wherein the one of the source and the drain of the fifth transistor is electrically connected to a gate of the third transistor, wherein the other of the source and the drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the second transistor is electrically connected to a second wiring, wherein the other of the source and the drain of the third transistor is electrically connected to a third wiring, wherein the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the fifth transistor, wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the fifth transistor, wherein the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the sixth transistor, wherein a gate of the first transistor is electrically connected to a gate of the fourth transistor, wherein the gate of the first transistor is electrically connected to a gate of the sixth transistor, wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the eighth transistor, wherein the one of the source and the drain of the seventh transistor is electrically connected to the gate line, wherein one of a source and a drain of the ninth transistor is electrically connected to one of a source and a drain of the tenth transistor, wherein the one of the source and the drain of the ninth transistor is electrically connected to a gate of the eighth transistor, wherein one of a source and a drain of the eleventh transistor is electrically connected to one of a source and a drain of the twelfth transistor, wherein the one of the source and the drain of the eleventh transistor is electrically connected to a gate of the ninth transistor, wherein the other of the source and the drain of the seventh transistor is electrically connected to a fourth wiring, wherein the other of the source and the drain of the eighth transistor is electrically connected to a fifth wiring, wherein the other of the source and the drain of the ninth transistor is electrically connected to a sixth wiring, wherein the other of the source and the drain of the ninth transistor is electric

Assignees

Inventors

Classifications

  • Layout of electrodes and connections · CPC title

  • G09G3/3648Primary

    using an active matrix (G09G3/367 - G09G3/3696 take precedence) · CPC title

  • Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display · CPC title

  • Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes · CPC title

  • Preventing or counteracting the effects of ageing · CPC title

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Frequently asked questions

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What does patent US9990894B2 cover?
A semiconductor device where delay or distortion of a signal output to a gate signal line in a selection period is reduced is provided. The semiconductor device includes a gate signal line, a first and second gate driver circuits which output a selection signal and a non-selection signal to the gate signal line, and pixels electrically connected to the gate signal line and supplied with the two…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification G09G3/3648. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 05 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).