Semiconductor device and liquid crystal display device

Patent metadata

Field	Value
Publication number	US-9989828-B2
Application number	US-201515504963-A
Country	US
Kind code	B2
Filing date	Aug 17, 2015
Priority date	Aug 20, 2014
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first substrate;
a gate electrode on the first substrate;
a gate insulating layer on the gate electrode;
an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer, and a lowered-resistance region contacting the channel region;
a source electrode and a drain electrode on the channel region;
a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and
a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, said second insulating film contacting the lowered-resistance region inside the contact hole,
wherein the second insulating film contains hydrogen and
wherein a distance between an edge of the contact hole and the source electrode is greater than 1.5 μm.

2. The semiconductor device according to claim 1 , wherein the second insulating film surrounds, in a plan view, the first insulating film that covers the channel region.

3. The semiconductor device according to claim 1 , wherein the oxide semiconductor film contains indium (In), gallium (Ga), zinc (Zn), and oxygen (O).

4. The semiconductor device according to claim 3 , wherein the oxide semiconductor film is a crystalline oxide semiconductor film.

5. A liquid crystal display device, comprising:
the semiconductor device according to claim 1 ;
a second substrate facing the first substrate of the semiconductor device; and
a liquid crystal layer containing liquid crystal molecules and interposed between the first substrate and second substrate,
wherein the semiconductor device includes a third conductive film disposed in a location above the second insulating film overlapping at least the lowered-resistance region in a plan view,
wherein one of the lowered-resistance region and the third conductive film has a plurality of slit openings having slit-like shapes, said one of the lowered-resistance region and the third conductive film forming a pixel electrode in each pixel, and
wherein another of the lowered-resistance region and the third conductive film forms a common electrode that generates an electric field between the common electrode and the pixel electrode to control orientation of the liquid crystal molecules.

6. The semiconductor device according to claim 1 , wherein the drain electrode is formed on a region in the oxide semiconductor film to which the lowered-resistance region extends.

7. The semiconductor device according to claim 1 , wherein a distance between an edge of the contact hole and the drain electrode is smaller than 1.5 μm.

Assignees

• Sharp Kk

Inventors

• Takamaru Yutaka
• Matsukizono Hiroshi
• Miyamoto Tadayoshi
• Saitoh Takao
• Kanzaki Yohsuke
• Ide Keisuke

Classifications

• G02F2201/40

  Arrangements for improving the aperture ratio · CPC title

• G02F2201/123

  pixel · CPC title

• G02F2001/134372

  Physics · mapped topic

• G02F1/1368 Primary

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F2201/121

  common or background · CPC title