Alignment of an optical component

US9989730B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9989730-B2
Application numberUS-201514798941-A
CountryUS
Kind codeB2
Filing dateJul 14, 2015
Priority dateJul 14, 2015
Publication dateJun 5, 2018
Grant dateJun 5, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Methods, apparatuses, and systems for alignment of an optical component are described herein. One method includes forming a pit in a substrate, placing an optical component in the pit, and aligning the optical component such that an edge of the optical component is in physical contact with an alignment edge of the pit.

First claim

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What is claimed: 1. A method for alignment of an optical component, comprising: forming a substrate with an ion trap and a pit formed therein; placing an optical component on a bottom surface of the pit such that a portion of the optical component extends underneath an under etch region of the pit; and aligning the optical component such that an edge of the optical component is in direct physical contact with the under etch region of the pit and such that a light beam exiting the optical component is directed along a path incident to an ion disposed in the ion trap. 2. The method of claim 1 , comprising aligning the optical component in the pit such that the edge of the optical component is substantially parallel to an alignment edge of the pit. 3. The method of claim 1 , comprising aligning the optical component such that a beam path exiting a surface of the optical component is directed along a particular path. 4. The method of claim 1 , comprising forming the pit such that the pit is substantially rectangular. 5. The method of claim 1 , wherein forming the pit comprises etching the pit in the substrate. 6. The method of claim 1 , wherein the optical component is a mirror. 7. The method of claim 6 , wherein the mirror is a 45 degree corner type mirror. 8. A system for alignment of an optical component, comprising: a substrate having an ion trap thereon; an etch pit having at least one alignment edge forming an edge of the pit; and a mirror disposed on a bottom surface of the etch pit such that a portion of the mirror extends underneath an under etch region of the etch pit, wherein an edge of the mirror is in direct physical contact with an under edge region of the etch pit, and wherein the mirror is aligned such that a light beam exiting the mirror is directed along a path incident to an ion disposed in the ion trap. 9. The system of claim 8 , wherein the edge of the mirror and the alignment edge of the etch pit are parallel to one another. 10. The system of claim 8 , wherein the mirror is a 45 degree corner type mirror. 11. The system of claim 8 , wherein the etch pit is formed in a silicon substrate. 12. The system of claim 8 , wherein the mirror is aligned so as to alter a characteristic of a light beam incident thereto to direct the light beam along a particular path. 13. An apparatus for alignment of an optical component, comprising: a substrate having a substrate surface and having an ion trap thereon; an etch pit having a bottom surface lower than the substrate surface and side walls joining the bottom surface to the substrate surface; and an optical component positioned on a bottom surface of the etch pit, wherein a first edge of the optical component is in substantial physical contact with a first sidewall of the etch pit in which the first sidewall provides a first alignment edge of the etch pit for alignment of the optical component, and wherein the optical component is aligned based on its contact with the first sidewall such that a light beam leaving the optical component is directed along a path incident to an ion disposed in the ion trap. 14. The apparatus of claim 13 , wherein the first edge of the optical component is parallel to the first alignment edge of the etch pit. 15. The apparatus of claim 13 , wherein the etch pit includes an under etch region. 16. The apparatus of claim 15 , wherein the first alignment edge is an edge of the under etch region. 17. The apparatus of claim 15 , wherein the alignment edge of the under etch region is substantially parallel to the first edge of the optical component. 18. The apparatus of claim 15 , wherein the optical component is positioned on the bottom surface of the etch pit such that a portion of the optical component extends underneath the under etch region of the etch pit. 19. The apparatus of claim 15 , wherein the optical component is in direct physical contact with the under etch region. 20. The apparatus of claim 13 , wherein the optical component positioned on the bottom surface of the etch pit includes a second edge that is in substantial physical contact with a second sidewall of the etch pit in which the second sidewall provides a second alignment edge of the etch pit for alignment of the optical component, and wherein the optical component is aligned based on its contact with the first sidewall and second sidewall such that a light beam leaving the optical component is directed along a path incident to an ion disposed in the ion trap.

Assignees

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Classifications

  • G02B7/1822Primary

    comprising means for aligning the optical axis (G02B7/1821 takes precedence) · CPC title

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Frequently asked questions

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What does patent US9989730B2 cover?
Methods, apparatuses, and systems for alignment of an optical component are described herein. One method includes forming a pit in a substrate, placing an optical component in the pit, and aligning the optical component such that an edge of the optical component is in physical contact with an alignment edge of the pit.
Who is the assignee on this patent?
Honeywell Int Inc
What technology area does this patent fall under?
Primary CPC classification G02B7/1822. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 05 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).