System and method to determine depth for optical wafer inspection

US9989479B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-9989479-B1
Application numberUS-201615180641-A
CountryUS
Kind codeB1
Filing dateJun 13, 2016
Priority dateMar 15, 2013
Publication dateJun 5, 2018
Grant dateJun 5, 2018

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Abstract

Official abstract text for this publication.

A computer-based apparatus for adjusting an auto-focus in a wafer inspection system, including: a wafer adjustment system; and an electronic feedback loop system configured to compare an intensity of a first light beam rotating in a first spiral about a first central axis, and when the intensity is less than a preselected threshold, adjust, using the wafer adjustment system, a position of the wafer until the intensity reaches the preselected threshold.

First claim

Opening claim text (preview).

What is claimed is: 1. A computer-based method for inspecting a wafer, comprising: storing, in a memory element for at least one computer, non-transitory computer readable instructions; detecting, using a detector, a first light beam rotating in a first spiral about a first central axis; and, executing, using a processor for the at least one computer, the non-transitory computer readable instructions to: generate, using the detected first light beam, an image consisting of only one single shape; determine an orientation of the only one single shape and a size of the only one single shape; and, calculate a depth of a defect within the wafer according to the orientation or the size of the only single shape. 2. The computer-based method of claim 1 , further comprising: illuminating, using a light source, the wafer with a second light beam rotating in a second spiral about a second central axis, wherein the first light beam includes the second light beam scattered by or reflected from the wafer. 3. The computer-based method of claim 1 , further comprising: illuminating, using a light source, the wafer with light free of a spiral wavefront or orbital angular momentum; and, filtering, using a phase and transmission filter, the light scattered by or reflected from the wafer to generate the first light beam. 4. The computer-based method of claim 1 , wherein: the first light beam includes orbital angular momentum. 5. The computer-based method of claim 1 , wherein: the only one single shape is a disc; and, determining the size of the only one single shape includes determining a diameter of the disk. 6. The computer-based method of claim 1 , wherein determining the size of the only one single shape includes determining a rotational position of the only one single shape with respect to a point within the only one single shape. 7. The computer-based method of claim 1 , further comprising executing, using the processor, the non-transitory computer readable instructions to: deconvolute, prior to determining the orientation, the image according to a predetermined orientation; or, amplify a signal for the only one single shape when the only one single shape matches a predetermined orientation, or attenuate a signal for the only one single shape when the only one single shape does not match a predetermined orientation. 8. The computer-based method for inspecting a wafer of claim 1 , wherein calculating the depth of the defect includes calculating the depth of the defect from a surface of the wafer. 9. The computer-based method for inspecting a wafer of claim 1 , wherein calculating the depth of the defect includes calculating the depth of a defect extending to a surface of the wafer. 10. The computer-based method for inspecting a wafer of claim 1 , wherein calculating the depth of the defect includes calculating the depth of a defect that does not extend to a surface of the wafer. 11. The computer-based method for inspecting a wafer of claim 1 , wherein: the wafer includes a silicon layer and a layer of silicon dioxide overlaying the silicon layer; a surface of the wafer is formed by the silicon dioxide layer; and, the surface of the wafer is not in contact with the silicon layer. 12. The computer-based method for inspecting a wafer of claim 1 , wherein: the wafer includes a plurality of layers, each layer including a respective material; the defect is within at least one layer included in the plurality of layers; and, a surface of the wafer is formed by a first layer included in the plurality of layers; and, wherein: at least one layer in the plurality of layers includes separate segments of the respective material; or, at least one layer in the plurality of layers includes a second material different from the respective material. 13. The computer-based method for inspecting a wafer, of claim 1 , further comprising: generating the only one single shape in the image using a phase and transmission filter inserted in the first light beam. 14. The computer-based method for inspecting a wafer, of claim 1 , further comprising: comparing, using an electronic feedback loop system, an intensity of a first light beam rotating in a first spiral about a first central axis; and, when the intensity is less than a preselected threshold, adjusting, using a wafer adjustment system, a position of the wafer until the intensity reaches the preselected threshold. 15. The computer-based method for inspecting a wafer, of claim 1 , further comprising: optimizing a linear combination of Laguerre polynomials such that the slope of a rotation line in a modal plane is greater than 2.0, wherein: the slope of the rotational line is defined by a change in values for respective energy numbers divided by a change in values for respective azimuthal numbers for a plurality of Gauss-Laguerre Eigen modes; the energy numbers form a first axis in a modal plane; and the azimuthal numbers form a second axis, orthogonal to the first axis, in the modal plane. 16. A computer-based apparatus for inspecting a wafer, comprising: at least one computer including a processor and a memory element configured to store non-transitory computer readable instructions; and, a detector arranged to detect a first light beam rotating in a first spiral about a first central axis, wherein: the processor is configured to execute the non-transitory computer readable instructions to: generate, using the detected first light beam, an image consisting of only one single shape; determine an orientation of the only one single shape and a size of the only one single shape; and, calculate a depth of a defect within the wafer according to the orientation or the size of the only one single shape. 17. The computer-based apparatus of claim 16 , further comprising: a light source arranged to emit light free of a spiral wavefront or orbital angular momentum; and, a phase and transmission filter arranged to filter the light to generate a second light beam, rotating in a second spiral about a second central axis, to illuminate the wafer, wherein: the first light beam includes the second light beam scattered by or reflected from the wafer. 18. The computer-based apparatus of claim 16 , further comprising: a light source arranged to illuminate the wafer with light free of a spiral wavefront or orbital angular momentum; and, a phase and transmission filter arranged to filter the light scattered by or reflected from the wafer to generate the first light beam. 19. The computer-based apparatus of claim 16 , wherein: the only one single shape is a disc; and, determining the size of the only one single shape includes determining a diameter of the disk. 20. The computer-based apparatus of claim 16 , wherein determining the size of the only one single shape includes determining a rotational position of the only one single shape with respect to a point within the only one single shape. 21. The computer-based apparatus of claim 16 , wherein the processor is configured to execute the non-transitory computer readable instructions to: deconvolute, prior to determining the first orientation, the image according to a predetermined orientation; or, amplify a signal for the only one single shape when the only one single shape matches a predetermined orientation, or attenuate a signal for the only one single shape when the only one single shape does not match a predetermined orientation. 22. The computer-based

Assignees

Inventors

Classifications

  • provided with illuminating means · CPC title

  • Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges (G01N21/8806 and G01N21/93 - G01N21/95692 take precedence; optical measurement of dimensions G01B11/00; optical scanning G02B26/10; image transformation G06T3/00; computerised image enhancement G06T5/00; image processing per se for flaw detection G06T7/0002) · CPC title

  • Biomedical image inspection · CPC title

  • Interference filters · CPC title

  • Determining position or orientation of objects or cameras (camera calibration G06T7/80) · CPC title

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What does patent US9989479B1 cover?
A computer-based apparatus for adjusting an auto-focus in a wafer inspection system, including: a wafer adjustment system; and an electronic feedback loop system configured to compare an intensity of a first light beam rotating in a first spiral about a first central axis, and when the intensity is less than a preselected threshold, adjust, using the wafer adjustment system, a position of the w…
Who is the assignee on this patent?
Kla Tencor Corp
What technology area does this patent fall under?
Primary CPC classification G01N21/9505. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 05 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).