Composition, electronic device, and thin film transistor

Patent metadata

Field	Value
Publication number	US-9988472-B2
Application number	US-201615239424-A
Country	US
Kind code	B2
Filing date	Aug 17, 2016
Priority date	Aug 31, 2015
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1:

In Chemical Formula 1, the definitions of the substituents are the same as in the detailed description. Further, an electronic device and a thin film transistor include a cured material of the composition.

First claim

What is claimed is:

1. A thin film transistor comprising:
a gate electrode;
a semiconductor on the gate electrode;
an insulator disposed between the gate electrode and the semiconductor; and
a source electrode and a drain electrode electrically connected to the semiconductor,
wherein the insulator includes a cured material of a composition comprising a product of condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1,

wherein, in the above Chemical Formula 1,

R 1 , R 2 , and R 3 are each independently one of hydrogen, a C1 to C20 alkoxy group, a hydroxyl group, a halogen, a carboxyl group, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C7 to C20arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C20 heterocycloalkyl group, a substituted or unsubstituted C2 to C20 alkylnyl group, or a combination thereof, provided that at least one of R 1 , R 2 , and R 3 is one of a C1 to C20 alkoxy group, a hydroxyl group, a halogen, or a carboxyl group,
R 4 to R 6 are each independently hydrogen, or a C1 to C20 alkyl group,
L 1 is a carbon atom,
L 2 and L 4 are each independently one of a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C20 arylene group, a substituted or unsubstituted C3 to C20 cycloalkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, —R—O—R′—, —R—NR′—, —R—(C═O)—R′—(wherein, R and R′ are independently C1 to C10 hydrocarbon group), or a combination thereof, and
L 3 is one of —O—(C═O)—NR″—, —(C═O)—NR″—(wherein, R″ is hydrogen, or a C1 to C6 hydrocarbon group), —O—, —COO—, or —S—.

2. The thin film transistor according to claim 1 , wherein R 1 , R 2 , and R 3 are each independently a C1 to C6 alkoxy group.

3. The thin film transistor according to claim 1 , wherein L 2 and L 4 are each independently a C1 to C20 alkylene group.

4. The thin film transistor according to claim 1 , wherein L 3 is —O—(C═O)—NR″— (wherein, R″ is hydrogen, or a C1 to C6 hydrocarbon group).

5. The thin film transistor according to claim 1 , wherein R 4 to R 6 are each independently one of hydrogen or a methyl group.

6. The thin film transistor according to claim 1 , wherein the thermal cross-linking agent is included in an amount of less than or equal to about 40 parts by weight based on 100 parts by weight of the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1 to perform the condensation reaction with the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1.

7. The thin film transistor according to claim 1 , wherein the thermal cross-linking agent is included in an amount of about 0.01 to 30 parts by weight based on 100 parts by weight of the product of hydrolysis and condensation polymerization the compound represented by Chemical Formula 1 to perform the condensation reaction with the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1.

8. The thin film transistor according to claim 1 , wherein the composition further comprise a nanoparticle linked through chemical bonding to the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1.

9. The thin film transistor according to claim 8 , wherein the nanoparticle and the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1 form a three dimensional network structure through chemical bonding.

10. The thin film transistor according to claim 8 , wherein the nanoparticle and the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1 form a core-shell structure.

11. The thin film transistor according to claim 8 , wherein the nanoparticle includes at least one of silica, titania, barium titanate, zirconia, barium sulfate, alumina, hafnium oxide, and a combination thereof.

12. The thin film transistor according to claim 8 , wherein the nanoparticle is present in an amount of less than or equal to about 40 parts by weight based on 100 parts by weight of the product of hydrolysis and condensation polymerization of the compound represented by Chemical Formula 1.

13. The thin film transistor according to claim 1 , wherein the composition further comprises at least one selected of a photo-initiator, a photo acid generator, and a dispersing agent.

14. An electronic device comprising: the thin film transistor according to claim 1 .

15. The electronic device according to claim 14 , wherein the electronic device is at least one of a solid lighting device, a display device, and a combination thereof.

16. The electronic device according to claim 15 , wherein
the solid lighting device is at least of a semiconductor light-emitting diode, an organic light-emitting diode, and a polymer light-emitting diode, and
the display device is at least one of an electronic paper, a liquid crystal display, an organic light-emitting diode display, and a quantum dot display.

17. The thin film transistor according to claim 1 , wherein the thermal cross-linking agent includes at least one acetate compound of a metal, and the metal is one of aluminum, zirconium, titanium, magnesium, hafnium, and tin.

18. The thin film transistor according to claim 1 , wherein the semiconductor is an organic semiconductor.

19. The thin film transistor according to claim 1 ,

wherein the thermal cross-linking agent is selected from the group consisting of aluminum acetoacetate, zirconium acetoacetate, titanium acetoacetate, magnesium acetoacetate, hafnium acetoacetate, and tin acetoacetate.

20. A capacitor, comprising:
a first electrode;
a second electrode on the first electrode; and
an insulating layer between the first electrode and the second electrode,
wherein the insulating layer includes a cured material of a composition comprising a product of condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1,

wherein, in the above Chemical Formula 1,
R 1 , R 2 , and R 3 are each independently one of hydrogen, a C1 to C20 alkoxy group, a hydroxyl group, a halogen, a carboxyl group, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C6 to C20 aryl group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C20 heterocycloalkyl group, a substituted or unsubstituted C2 to C20 alkylnyl group, or a combination thereof, provided that at least one of R 1 , R 2 , and R 3 is one of a C1 to C20 alkoxy group, a hydroxyl group, a halogen, or a carboxyl group,

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Eun Kyung
• Jung Jiyoung
• Park Jeong Il
• Choi Ajeong

Classifications

• C08G77/442

  containing vinyl polymer sequences · CPC title

• H01L51/0537

  Electricity · mapped topic

• C08G77/14

  containing silicon bound to oxygen-containing groups · CPC title

• C09D183/10 Primary

  Block or graft copolymers containing polysiloxane sequences (obtained by polymerising a compound having a carbon-to-carbon double bond on to a polysiloxane C09D151/08, C09D153/00) · CPC title

• C08F130/08 Primary

  containing silicon · CPC title