Manufacturing method of electrode and display device including the electrode

Patent metadata

Field	Value
Publication number	US-9985254-B2
Application number	US-201615351712-A
Country	US
Kind code	B2
Filing date	Nov 15, 2016
Priority date	Jan 7, 2016
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A manufacturing method of a display device is provided. The manufacturing method includes: forming a first electrode over a substrate; forming an organic layer over the first electrode; and forming a second electrode over the organic layer by sputtering a target including a conductive oxide with a light-transmitting property. A mask is arranged between the organic layer and the target when the second electrode is formed. The mask has periodically arranged through holes with a maximum width equal to or larger than 0.1 μm and equal to or smaller than 3 μm.

First claim

What is claimed is:

1. A method for manufacturing a display device, the method comprising:
forming a first electrode over a substrate;
forming an organic layer over the first electrode, the organic layer including an emission layer; and
forming a second electrode over the organic layer by sputtering a target including a conductive oxide with a light-transmitting property,
wherein a mask is arranged between the organic layer and the target when the second electrode is formed,
wherein the mask comprises a plurality of periodically arranged through holes having a maximum width equal to or larger than 0.1 μm and equal to or smaller than 3 μm, and
wherein the mask is located closer to the substrate than to the target.

2. The method according to claim 1 ,
wherein a pitch of the plurality of through holes is equal to or larger than 0.2 μm and equal to or smaller than 6 μm.

3. The method according to claim 1 ,
wherein the mask comprises a metal.

4. The method according to claim 1 , further comprising:
forming, over the second electrode, a protection film with a thickness equal to or larger than 0.1 μm and equal to or smaller than 5 μm.

5. The method according to claim 1 , further comprising:
applying a direct voltage or an alternating voltage on the mask after forming the second electrode.

6. The method according to claim 1 ,
wherein the plurality of through holes has a circular shape.

7. The method according to claim 1 ,
wherein the plurality of through holes is arranged in a honeycomb pattern or a matrix pattern.

8. A method for manufacturing a display device, the method comprising:
forming a first electrode over a substrate;
forming an organic layer over the first electrode, the organic layer including an emission layer;
disposing a mask over the organic layer, the mask comprising a plurality of periodically arranged through holes; and
forming a second electrode over the organic layer by sputtering a target including a conductive oxide with a light-transmitting property,
wherein a maximum area of the plurality of through holes is smaller than an area where the organic layer and the first electrode contact with each other.

9. The method according to claim 8 ,
wherein a pitch of the plurality of through holes is equal to or larger than 0.2 μm and equal to or smaller than 6 μm.

10. The method according to claim 8 ,
wherein the mask comprises a metal.

11. The method according to claim 8 , further comprising:
forming, over the second electrode, a protection film with a thickness equal to or larger than 0.1 μm and equal to or smaller than 5 μm.

12. The method according to claim 8 , further comprising:
applying a direct voltage or an alternating voltage on the mask after forming the second electrode.

13. The method according to claim 8 ,
wherein the mask is located closer to the substrate than to the target.

14. The method according to claim 8 ,
wherein the plurality of through holes has a circular shape.

15. The method according to claim 8 ,
wherein the plurality of through holes is arranged in a honeycomb pattern or a matrix pattern.

16. A film-forming apparatus comprising:
a chamber;
a holder in the chamber, the holder being configured to hold a target;
a stage in the chamber and under the holder, the stage being configured to support a substrate;
a power source configured to induce an electric discharge in the chamber;
a gas-supplying portion configured to supply a gas to the chamber;
a mask holder configured to hold a mask having a plurality of periodically arranged through holes, the mask being arranged between the substrate and the target; and
a second power source configured to apply a direct voltage or an alternating voltage on the mask.

17. The film-forming apparatus according to claim 16 , further comprising:
an alignment mechanism configured to adjust a position of the mask with respect to the substrate.

18. The film-forming apparatus according to claim 17 ,
wherein the substrate comprises a plurality of sub-pixels, and
wherein the alignment mechanism is configured to adjust the position of the mask so that the plurality of through holes overlaps with one of the plurality of sub-pixels.

Assignees

• Japan Display Inc

Inventors

• Ono Keisuke

Classifications

• C23C14/04

  Coating on selected surface areas, e.g. using masks · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• C23C14/50

  Substrate holders · CPC title

• C23C14/042

  using masks · CPC title

• C23C14/086

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title