Light detection device with integrated photodiode and thin film transistor

Patent metadata

Field	Value
Publication number	US-9985061-B2
Application number	US-201515126821-A
Country	US
Kind code	B2
Filing date	Mar 19, 2015
Priority date	Mar 20, 2014
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

First claim

What is claimed is:

1. A light detection device, comprising:
a substrate;
a thin film transistor on the substrate, the thin film transistor including a semiconductor layer, a source electrode, a drain electrode, and a gate electrode;
an insulating layer that covers the semiconductor layer;
a photodiode formed on the insulating layer, the photodiode including a bottom electrode directly connected to the drain electrode of the thin film transistor through a contact hole formed in the insulating layer, a semiconductor laminate structure, and a top electrode that sandwiches the semiconductor laminate structure with the bottom electrode, the top electrode and the semiconductor laminate structure together extending beyond and covering all edges of the bottom electrode in a plan view; and
an electrode formed on the insulating layer, the electrode being made of a same conductive film as the bottom electrode of the photodiode and arranged so as to overlap the semiconductor layer with the insulating layer interposed therebetween, the electrode being either one of said gate electrode or a separate electrode different from the gate electrode,
wherein the semiconductor layer of the thin film transistor includes an oxide semiconductor.

2. The light detection device according to claim 1 ,
wherein the gate electrode is arranged between the substrate and the semiconductor layer of the thin film transistor, and
wherein the electrode includes a portion facing the gate electrode across the semiconductor layer of the thin film transistor.

3. The light detection device according to claim 1 , wherein the electrode is the separate electrode different from the gate electrode and is electrically connected to the gate electrode.

4. The light detection device according to claim 1 , wherein the electrode is the separate electrode different from the gate electrode and is electrically connected to the source electrode.

5. The light detection device according to claim 1 , wherein the electrode is the separate electrode different from the gate electrode and is in an electrically floating state.

6. The light detection device according to claim 1 , wherein the electrode is the separate electrode different from the gate electrode and is connected to a wiring line that is electrically isolated from both the source electrode and the gate electrode.

7. The light detection device according to claim 1 , wherein the electrode is the gate electrode.

8. The light detection device according to claim 7 , further comprising an additional electrode between the substrate and the semiconductor layer, said additional electrode being connected to a wiring line that is electrically isolated from both the source electrode and the gate electrode.

9. The light detection device according to claim 1 , wherein the oxide semiconductor includes an In—Ga—Zn—O semiconductor.

10. The light detection device according to claim 9 , wherein the In—Ga—Zn—O semiconductor includes crystalline sections.

11. The light detection device according to claim 1 , further comprising: an insulating planarizing film formed between the insulating layer and a layer in which the bottom electrode of the photodiode and the electrode are formed.

12. The light detection device according to claim 1 , wherein said electrode covers an entirety of a channel region of the semiconductor layer in the plan view.

13. The light detection device according to claim 1 , wherein said electrode covers an entirety of the semiconductor layer in the plan view.

Assignees

• Sharp Kk

Inventors

• Miyamoto Tadayoshi
• Tomiyasu Kazuhide
• Tomyo Atsushi
• ITO Kazuatsu
• Mori Shigeyasu

Classifications

• H01L29/7869

  Electricity · mapped topic

• H01L29/78696

  Electricity · mapped topic

• H01L27/14663

  Electricity · mapped topic

• H01L27/14616

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic