PEALD of films comprising silicon nitride

Patent metadata

Field	Value
Publication number	US-9984868-B2
Application number	US-201414211024-A
Country	US
Kind code	B2
Filing date	Mar 14, 2014
Priority date	Mar 15, 2013
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

First claim

What is claimed is:

1. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface, wherein the silicon precursor comprises (X y H 3-y Si) z CH 4-z , wherein X is a halide selected from the group consisting of Cl, Br, and I, y has a value of 0 to 3 and z has a value of 1 to 3;
purging excess silicon precursor;
exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor; and
purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

2. The method of claim 1 , wherein the substrate temperature ranges from about 200 to about 400° C.

3. The method of claim 1 , wherein the ionized reducing agent comprises ammonia, nitrogen, hydrogen, an alkyl amine, hydrazine or a substituted hydrazine.

4. The method of claim 3 , wherein the alkyl amine comprises dimethyl amine.

5. The method of claim 3 , wherein the substituted hydrazine comprises CH 3 N 2 H.

6. The method of claim 1 , wherein the silicon precursor comprises hexachlorodisilane.

7. The method of claim 1 , wherein the film comprising SiN has a thickness of about 50 to about 500 Angstroms.

8. The method of claim 1 , further comprising exposing the film comprising SiN to a plasma treatment to increase the tensile strength of the film.

9. The method of claim 7 , wherein the film comprising SiN has a thickness of about 10 to about 40 Angstroms.

10. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
(a) exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface, the silicon precursor comprising a compound having the formula (X y H 3-y Si) z CH 4-z , where X is one or more of Cl, Br or I, y is from 0 to 3 and z is from 1 to 4;
(b) purging excess silicon precursor;
(c) exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor;
(d) purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.;
(e) repeating (a)-(d);
(f) exposing the film comprising SiN to a plasma treatment once about 10 to about 40 Angstroms of film have been deposited, wherein the film has a pattern loading effect of less than about 5.

11. A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
loading a substrate into a processing chamber;
exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface, wherein the silicon precursor comprises a compound with a formula of (X y H 3-y Si)(CH 2 ) n (SiX y H 3-y ), wherein X is a halogen selected from Cl, Br or I, y is from 1 to 3 and n is 2 or 3, or a compound with a formula of (X y H 3-y Si)(CH 2 )(SiX p H 2-p )(CH 2 )(SiX y H 3-y ), where X is a halogen selected from Cl, Br or I, y is from 1 to 3 and p is 0 to 2;
purging excess silicon precursor;
exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor, wherein the ionized reducing agent comprises a substituted hydrazine generated externally from the processing chamber; and
purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

Assignees

• Nguyen Victor
• Lee Woong Jae
• Balseanu Mihaela
• Xia Li Qun
• Witty Derek R
• Applied Materials Inc

Inventors

• Nguyen Victor
• Lee Woong Jae
• Balseanu Mihaela
• Xia Li-Qun
• Witty Derek R

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6538

  by exposure to UV light · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title