Photoresist having sensitizer bonded to acid generator

Patent metadata

Field	Value
Publication number	US-9983474-B2
Application number	US-201514851093-A
Country	US
Kind code	B2
Filing date	Sep 11, 2015
Priority date	Sep 11, 2015
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

The present disclosure is directed to a photoresist and a method of performing a lithography process using the photoresist. The photoresist contains a polymer and a photo-acid generator. The photo-acid generator contains a sensitizer component, an acid generator component, and a bonding component that bonds the sensitizer component to the acid generator component. The bonding component may be either a single bond or a conjugated bond. The lithography process may be an EUV lithography process or an e-beam lithography process.

First claim

What is claimed is:

1. A photoresist, comprising:
a polymer; and
a photo-acid generator that contains:
a sensitizer component;
an acid generator component; and
a bonding component that covalently bonds the sensitizer component to an anion of the acid generator component, wherein the bonding component includes a conjugated bond;

wherein the bonding component has a chemical formula that is one of the following:

wherein n is in a range between 1 and 20.

2. The photoresist of claim 1 , wherein the sensitizer component contains one of the following: a metal, a metal oxide, a metal complex, aromatic carbon ring derivatives, or heterocyclic derivatives.

3. The photoresist of claim 1 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises an aromatic carbon ring.

4. The photoresist of claim 1 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises a straight alkyl chain of 1-6 carbon atoms.

5. The photoresist of claim 1 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises a cyclic alkyl chain of 3-6 carbon atoms.

6. The photoresist of claim 1 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises a straight alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol functional group.

7. The photoresist of claim 1 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises a cyclic alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol functional group.

8. The photoresist of claim 1 , wherein the sensitizer component is configured to absorb extreme ultraviolet (EUV) light to produce electrons.

9. The photoresist of claim 1 , wherein a distance between the sensitizer component and the acid generator component is in a range from about 0.5 nanometers to 3.5 about nanometers.

10. A photo-acid generator (PAG) of a photoresist, comprising:
a sensitizer moiety;
an acid generator; and
a linker that covalently links the sensitizer moiety to an anion of the acid generator via a conjugated link, and wherein the conjugated link has a chemical formula that is one of the following:

wherein n is in a range between 1 and 20.

11. The photo-acid generator of claim 10 , wherein the sensitizer moiety is configured to absorb extreme ultraviolet (EUV) light to produce electrons, and wherein the acid generator has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises an alkyl chain of 1-6 carbon atoms.

12. The photo-acid generator of claim 10 , wherein the sensitizer moiety is configured to absorb extreme ultraviolet (EUV) light to produce electrons, and wherein the acid generator has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises an alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol functional group.

13. The photo-acid generator of claim 10 , wherein the sensitizer moiety is configured to absorb extreme ultraviolet (EUV) light to produce electrons.

14. The photo-acid generator of claim 13 , wherein the conjugated link provides a pathway for the electrons to transfer from the sensitizer moiety to the acid generator.

15. A photo-sensitive material, comprising:
a sensitizer component configured to absorb extreme ultraviolet (EUV) light to produce electrons;
an acid generator component; and
a conjugated bonding component that covalently bonds the sensitizer component to an anion of the acid generator component;
wherein the conjugated bonding component has a chemical formula that is one of the following:

wherein n is in a range between 1 and 20.

16. The photo-sensitive material of claim 15 , wherein the sensitizer component contains one of the following: a metal, a metal oxide, a metal complex, aromatic carbon ring derivatives, or heterocyclic derivatives.

17. The photo-sensitive material of claim 15 , wherein the photo-sensitive material is a negative photoresist.

18. The photo-sensitive material of claim 15 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises an alkyl chain of 1-6 carbon atoms.

19. The photo-sensitive material of claim 15 , wherein the acid generator component has the following chemical formula:
R 1 —SO 3 −

wherein R 1 comprises an alkene, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxylic acid, ester, ether, amide, amine, imine, imide, azide, nitrate, nitrile, nitrite or thiol functional group.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Yen-Hao
• Wang Chien-Wei

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• G03F7/2059

  using a scanning corpuscular radiation beam, e.g. an electron beam · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title