Tunable near-infrared emitters and methods

US9983058B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9983058-B2
Application numberUS-201715590397-A
CountryUS
Kind codeB2
Filing dateMay 9, 2017
Priority dateMay 9, 2016
Publication dateMay 29, 2018
Grant dateMay 29, 2018

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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The present invention relates to near-infrared quantum emitters, and in particular carbon nanostructures with chemically incorporated fluorescent defects, and methods of synthesizing near-infrared emitting nanostructures.

First claim

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What is claimed is: 1. A method of synthesizing a near infrared emitter comprising the steps of: reacting a carbon nanostructure with a halogen-containing hydrocarbon precursor and thereby creating sp 3 defects in said carbon nanostructure, wherein covalent functionalization produces fluorescent defects that emit near-infrared radiation having wavelengths between about 800 nm and about 2500 nm. 2. The method of claim 1 , wherein said carbon nanostructure is a carbon nanotube (CNT). 3. The method of claim 2 , wherein said CNT has a diameter of between about 0.5 nm and about 1.6 nm. 4. The method of claim 1 , wherein said sp 3 defects are created in a pristine carbon nanostructure during said reacting step. 5. The method of claim 1 , wherein said halogen-containing hydrocarbon precursor is a chlorine, a bromide, an iodide or a di-halide alkyl precursor. 6. The method of claim 1 , wherein said halogen-containing hydrocarbon precursor is a polymer containing the reactive halogen. 7. The method of claim 6 , wherein said halogen-containing hydrocarbon precursor is a polyoligonucleotide containing the reactive halogen. 8. The method of claim 1 , wherein said halogen-containing hydrocarbon precursor is an alkyl halide. 9. The method of claim 5 , wherein said reacting step further comprises combining said carbon nanostructure with sodium dithionite (Na2S2O4), said sodium dithionite activating said alkyl precursor. 10. The method of claim 1 , wherein said halogen-containing hydrocarbon precursor is an iodide or di-halide aryl precursor. 11. The method of claim 10 , comprising exposing said carbon nanostructure and said aryl precursor to electromagnetic radiation having a wavelength(s) of between about 300 nm and about 1200 nm and resonant with said carbon nanostructures, said electromagnetic radiation activating said aryl precursor. 12. The method of claim 1 , wherein said created sp 3 defects are selected from the group consisting of monovalent alkyl defects, divalent alkyl defects, monovalent aryl defects, and divalent aryl defects. 13. The method of claim 1 , wherein said covalently functionalized carbon nanostructure is functionalized with an alkyl group or an aryl group. 14. The method of claim 1 , wherein said covalently functionalized carbon nanostructure is functionalized with —(CH 2 ) n (CF 2 ) m CF 3 , wherein n is an integer between 0 and 10, and wherein m is an integer between 0 and 10. 15. The method of claim 1 , wherein said covalently functionalized carbon nanostructure is functionalized with —(CH 2 ) n CH 3 , wherein n is an integer between 0 and 17. 16. A synthetic near-infrared emitter, comprising: a carbon nanostructure comprising sp 3 defects in a carbon lattice thereof and created via reaction with a halogen-containing hydrocarbon precursor; and a functional group covalently bonded to said sp 3 defects to produce fluorescent defects that emit near-infrared radiation having wavelengths between about 800 nm and about 2500 nm. 17. The near-infrared emitter of claim 16 , wherein said carbon nanostructure is a carbon nanotube (CNT). 18. The near-infrared emitter of claim 16 , wherein said CNT has a diameter of between about 0.5 nm and about 1.6 nm. 19. The near-infrared emitter of claim 16 , wherein said functional group is selected from the group consisting of a monovalent alkyl group, a divalent alkyl group, a monovalent aryl group, and a divalent aryl group. 20. The near-infrared emitter of claim 16 , wherein said functional group is —(CH 2 ) n (CF 2 ) m X, wherein n is an integer between 0 and 17, and wherein m is an integer between 0 and 17, and wherein X is CH3, CF3, NH2, N+(CH2CH3)2, or COOH. 21. The near-infrared emitter of claim 16 , wherein said functional group is —(CH 2 ) n CH 3 , wherein n is an integer between 0 and 10.

Assignees

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Classifications

  • Electricity · mapped topic

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

  • Electricity · mapped topic

  • Infrared light · CPC title

  • G01J3/108Primary

    for measurement in the infrared range · CPC title

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Frequently asked questions

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What does patent US9983058B2 cover?
The present invention relates to near-infrared quantum emitters, and in particular carbon nanostructures with chemically incorporated fluorescent defects, and methods of synthesizing near-infrared emitting nanostructures.
Who is the assignee on this patent?
Wang Yuhuang, Kwon Hyejin, Kim Mijin, and 1 more
What technology area does this patent fall under?
Primary CPC classification G01J3/108. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 29 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).