High-nickel ternary core-shell precursor, positive electrode material and preparation method therefor
US-2024166533-A1 · May 23, 2024 · US
US9982344B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9982344-B2 |
| Application number | US-201615215153-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2016 |
| Priority date | Aug 24, 2010 |
| Publication date | May 29, 2018 |
| Grant date | May 29, 2018 |
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A method of forming a thin film on a substrate which includes a step of contacting a surface with a precursor compound having a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided. The resulting modified surface is then contacted with an activating compound.
Opening claim text (preview).
What is claimed is: 1. A method for depositing a film on a surface of a substrate, the method comprising: a) reacting a vapor of a metal-containing compound described by formula I with an activating compound to form a film on the surface of the substrate by a chemical vapor deposition process: wherein: M is Fe(II), Co(II), or Ni(II); n is a formal charge of M; m is an integer; o is an integer such that an overall formal charge of the a metal-containing compound described by formula I is 0; p is a formal charge of the ligand within brackets; R 1 is hydrogen, C 1 -C 12 alkyl, amine, or C 6 -C 18 aryl; and R 2 is hydrogen, C 1 -C 10 alkyl, C 6 -C 18 aryl, amino, C 1 -C 12 alkylamino, or C 2 -C 24 dialkylamino. 2. The method of claim 1 wherein the activating compound is a reducing agent selected from the group consisting of molecular hydrogen, atomic hydrogen, silane, disilane, organosilanes, compounds containing Si—H bonds, germane, organogermanes, compounds containing Ge—H bonds, stannane, compounds containing Sn—H bonds, other metal hydride compounds, formic acid, glyoxalic acid, oxalic acid, other carboxylic acids, diborane, compounds containing B—H bonds, hydrazine, carbon-substituted hydrazines, formalin, formaldehyde, organic alcohols, organoaluminum compounds, organozinc compounds, and plasma-activated versions thereof. 3. The method of claim 1 wherein the activating compound is an oxidizing agent and the film is a metal oxide. 4. The method of claim 1 wherein the activating compound is a nitrogen-containing agent and the film is a metal nitride. 5. The method of claim 1 wherein the metal-containing compound described by formula I is thermally activated. 6. The method of claim 1 wherein the metal-containing compound described by formula I is plasma activated. 7. The method of claim 1 wherein R 1 and R 2 are each independently hydrogen or C 1 -C 4 alkyl. 8. The method of claim 1 wherein M is Fe(II), Co(II), or Ni(II). 9. The method of claim 1 wherein M is Co(II). 10. The method of claim 1 wherein the film is a metal.
without a metal-carbon linkage · CPC title
characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title
Compounds without a metal-carbon linkage · CPC title
without a metal-carbon linkage · CPC title
compounds without a metal-carbon linkage · CPC title
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