Manufacturing method of cylindrical sputtering target material

Patent metadata

Field	Value
Publication number	US-9982335-B2
Application number	US-201514911236-A
Country	US
Kind code	B2
Filing date	Feb 20, 2015
Priority date	Apr 11, 2014
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A manufacturing method of a cylindrical sputtering target material formed of copper or a copper alloy is provided, the method including: a continuous casting step of casting a cylindrical ingot having an average crystal grain diameter equal to or smaller than 20 mm using a continuous casting machine or a semi-continuous casting machine; and a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the cylindrical ingot, to form the cylindrical sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area.

First claim

The invention claimed is:

1. A manufacturing method of a tube-shaped sputtering target material formed of copper or a copper alloy, the method comprising:
a continuous casting step of casting a tube-shaped ingot having an average crystal grain diameter of 0.01 to 20 mm using a continuous casting machine or a semi-continuous casting machine; and
a cold working step and a heat treatment step of repeatedly performing cold working and a heat treatment with respect to the tube-shaped ingot or a tube-shaped worked material obtained by working the tube-shaped ingot, to form the tube-shaped sputtering target material in which an average crystal grain diameter of an outer peripheral surface is from 10 μm to 150 μm and a proportion of the area of crystal grains having a crystal grain diameter more than double the average crystal grain diameter is less than 25% of the entire crystal area,
wherein a tube expansion step is performed at least once as the cold working step, said tube expansion step increasing an outer diameter of the tube-shaped ingot or the tube-shaped worked material in a range exceeding 0% and equal to or smaller than 30% and changing a cross sectional area after the cold working to be in a range of −10% to +10% of a cross sectional area before the cold working,
the method does not include a hot working step for forming the ingot,
a casting speed of the continuous casting step is set so that a cooling speed of the ingot is equal to or higher than 100° C./min, and
a heat treatment temperature is from 400° C. to 900° C. and the maintaining time in the range of the heat treatment temperature is in a range of 15 minutes to 120 minutes in the heat treatment step.

2. The manufacturing method of a tube-shaped sputtering target material according to claim 1 ,
wherein the tube-shaped sputtering target material has an outer diameter D thereof is in a range satisfying a relationship of 140 mm≤D≤180 mm, an inner diameter d thereof is in a range satisfying a relationship of 110 mm≤d≤135 mm, and a length L thereof is in a range satisfying a relationship of 1000 mm≤L≤4000 mm.

3. The manufacturing method of a tube-shaped sputtering target material according to claim 1 , wherein
the tube-shaped sputtering target material is configured with either pure copper selected from the group consisting of oxygen-free copper, tough pitch copper and 4N copper, or a copper alloy containing one kind or two or more kinds selected from Mg, Al, Ag, Ti, Zr, Mn, Ca, Cr, Sn, Ni, Zn, Co, and P, and
the total content of one kind or two or more kinds selected from Mg, Al, Ag, Ti, Zr, Mn, Ca, Cr, Sn, Ni, Zn, Co, and P is in a range of 0.001 mass % to 10 mass %.

4. The manufacturing method of a tube-shaped sputtering target material according to claim 1 , wherein the copper alloy is configured with a Cu-0.002 mass % to 2 mass % Mg alloy, a Cu-0.001 mass % to 10 mass % Al alloy, a Cu-0.001 mass % to 10 mass % Mn alloy, a Cu-0.05 mass % to 4 mass % Ca alloy and a Cu-0.01 mass % to 10 mass % Ag alloy.

5. The manufacturing method of a tube-shaped sputtering target material according to claim 1 , wherein the tube-shaped ingot having the average crystal grain diameter of 7 to 20 mm is casted in the continuous casting step.

Assignees

• Mitsubishi Materials Corp

Inventors

• Sakurai Akira
• Kumagai Satoshi
• Sonohata Takashi
• OHTO Michiaki

Classifications

• C22C9/04

  with zinc as the next major constituent · CPC title

• C22C9/06

  with nickel or cobalt as the next major constituent · CPC title

• C21D9/0068

  for particular articles not mentioned below · CPC title

• C23C14/3407

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title