Thin film self assembly of topcoat-free silicon-containing diblock copolymers

Patent metadata

Field	Value
Publication number	US-9982097-B2
Application number	US-201615041095-A
Country	US
Kind code	B2
Filing date	Feb 11, 2016
Priority date	Feb 11, 2016
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L′ in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

First claim

What is claimed is:

1. A linear block copolymer comprising:
a first block (block A), wherein block A is a random copolymer chain comprised of about 37-55 mol % of first repeat units of structure (A-2):

 and

about 63-45 mol % of second repeat units of structure (A-3):

wherein the first repeat units and the second repeat units are covalently linked in block A;
a second block (block B) comprising covalently linked aliphatic repeat units selected from the group consisting of aliphatic carbonate repeat units, aliphatic ester repeat units, aliphatic ether repeat units, and combinations thereof; and
a divalent linking group L′ (junction group) which covalently joins an end repeat unit of block A to an end repeat unit of block B;

wherein
the block copolymer has a polymer backbone that includes the atomic centers 1 and 2 of both (A-2) and (A-3), one or more atomic centers of the aliphatic repeat unit of block B, and one or more atomic centers of L′,
L′ comprises 1-25 fluorines, wherein none of the fluorines of L′ is linked to an atomic center of the polymer backbone, and
the block copolymer is capable of self-assembly to form a domain pattern comprising phase-segregated perpendicularly oriented alternating domains, the domains comprising respective chemically distinct blocks of the block copolymer.

2. The block copolymer of claim 1 , wherein 90 mol % to 100 mol % of block B is comprised of aliphatic carbonate repeat units of structure (A-4):

wherein atomic centers 1-6 are atomic centers of the polymer backbone.

3. The block polymer of claim 2 , wherein block B is a homopolymer chain of structure (A-4).

4. The block copolymer of claim 1 , wherein L′ comprises 15-25 fluorines.

5. The block copolymer of claim 1 , wherein the domain pattern has a bulk periodicity (Lo) of between about 4 nm and about 28 nm.

6. The block copolymer of claim 1 , wherein L′ has a lower surface energy than block A and a lower surface energy than block B.

7. The block polymer of claim 1 , wherein L′ has a surface energy between 0 and 30 mN/m.

8. The block polymer of claim 1 , wherein the mol % of the first repeat unit (A-2) of block A plus the mol % of the second repeat unit (A-3) of block A is 100 mol %.

9. The block polymer of claim 1 , wherein L′ has a structure according to formula (A-5):

wherein
z is a positive integer having a value of 0 to 11, and
the numbered atomic centers of L′ are atomic centers of the backbone of the block copolymer.

10. The block polymer of claim 9 , wherein z is 7.

11. The block polymer of claim 9 , wherein z is 9.

12. The block polymer of claim 1 , wherein L′ has a structure according to (A-6):

wherein
z is a positive integer having a value of 1-7, and
the numbered atomic centers are atomic centers of the backbone of the block copolymer.

13. A composition, comprising:
a solvent; and
the block copolymer of claim 1 in contact with the solvent;

wherein
the composition is capable of forming a film layer comprising the block copolymer, wherein the film layer is capable of self-assembling when thermally annealed, thereby forming a pattern of phase-segregated perpendicularly oriented alternating domains comprising respective chemically distinct blocks of the block copolymer.

14. A method, comprising:
providing a first layered structure comprising an underlayer;
forming a film layer comprising the block copolymer of claim 1 disposed on the underlayer, wherein the film layer has a top surface in contact with an atmosphere interface; and
thermally annealing the film layer, thereby forming a second layered structure comprising a self-assembled domain pattern of the block copolymer, the domain pattern comprising phase-segregated perpendicularly oriented alternating domains comprising respective chemically distinct blocks of the block copolymer and having a characteristic pitch (Lo).

15. The method of claim 14 , wherein the domain pattern comprises lamellar domains.

16. The method of claim 14 , wherein the domain pattern comprises cylindrical domains.

17. The method of claim 14 , wherein Lo is between 4 nm and 28 nm.

18. The method of claim 14 , wherein the underlayer is preferentially wetted by one of the domains.

19. The method of claim 14 , wherein the underlayer is a poly(styrene-r-methyl methacrylate) random copolymer brush.

20. The method of claim 14 , wherein the atmosphere interface is preferentially wetted by one of the domains.

21. The method of claim 14 , wherein said inducing the block copolymer of the film layer to self-assemble using a thermal treatment comprises baking the film layer at a temperature between about 80° C. and about 250° C. for a time period between about 1 second and about 24 hours.

22. The method of claim 14 , comprising selectively etching one of the domains, thereby forming a third layered structure comprising an etched domain pattern comprising one or more remaining domains of the self-assembled block copolymer.

23. The method of claim 22 , comprising transferring the etched domain pattern to the substrate.

24. The method of claim 23 , wherein said transferring the etched domain pattern to the substrate is performed using a tone inversion process with respect to the etched domain pattern.

25. A linear block copolymer for self-assembly, comprising:
a first block (block A), wherein block A is a random copolymer chain comprised of about 37-55 mol % of first repeat units of structure (A-2):

 and

about 63-45 mol % of a second repeat units of structure (A-3):

wherein the first repeat units and the second repeat units are covalently linked in block A;
a second block (block B) of which 90-100 mol % is aliphatic carbonate repeat units of structure (A-4):

wherein the carbonate repeat units are covalently linked in block B; and
a divalent linking group L′ (junction group) which covalently joins an end repeat unit of block A to an end repeat unit of block B, wherein L′ is selected from the group consisting of

wherein
the block copolymer has a backbone that includes the atomic centers 1 and 2 of both (A-2) and (A-3), the atomic centers 1-6 of (A-4), and one or more atomic centers of L′,
none of the fluorines of L′ is linked to an atomic center of the backbone of the block copolymer, and
the block copolymer is capable of self-assembly to form a domain pattern comprising phase-segregated perpendicularly oriented alternating domains, the domains comprising respe

Assignees

• IBM

Inventors

• Arellano Noel
• Magbitang Teddie P
• Sanders Daniel P
• Schmidt Kristin
• Vora Ankit

Classifications

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B05D7/544

  the first layer is let to dry at least partially before applying the second layer · CPC title

• C08G81/027 Primary

  containing polyester or polycarbonate sequences · CPC title

• H01J37/32009

  Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title

• B05D3/0254

  After-treatment · CPC title