MEMS-microphone with reduced parasitic capacitance

Patent metadata

Field	Value
Publication number	US-9980052-B2
Application number	US-201113261881-A
Country	US
Kind code	B2
Filing date	Nov 14, 2011
Priority date	Nov 14, 2011
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A MEMS microphone with reduced parasitic capacitance is provided. A microphone includes a protection film covering a rim-sided area of the backplate.

First claim

The invention claimed is:

1. A MEMS microphone comprising:
a membrane in a membrane layer;
a first backplate in a first backplate layer;
an anchor element in an anchor layer between the membrane layer and the first backplate layer, wherein the anchor element mechanically connects the first backplate to the membrane, and wherein the anchor element comprises SiO 2 ;
a protection film;
an active region;
a rim region surrounding the active region;
an additional backplate in an additional backplate layer, wherein the membrane layer is arranged between the first backplate layer and the additional backplate layer; and
a ring-shaped isolation element located in the additional backplate layer, wherein the ring-shaped isolation element comprises silicon dioxide and surrounds a central section of the additional backplate,
wherein the protection film covers an outer side surface and a top surface of the first backplate and an outer side surface of the anchor element in the rim region, and wherein the protection film further covers a top surface of the membrane outside of the outer side surface of the anchor element, and wherein an inner side surface of the protection film is aligned directly over the top surface of a rim-sided area of the first backplate and is disposed between the outer side surface of the first backplate and an inner side surface of the rim-sided area of the first backplate,
wherein the protection film covers the outer side surface of the anchor element but not an inner side surface of the anchor element,
wherein the protection film is in direct contact with at least a portion of the outer side surface of the anchor element,
wherein the protection film protects the anchor element, and
wherein the protection film comprises a material that resists a VHF environment.

2. The MEMS microphone of claim 1 , wherein the protection film is photo sensitive.

3. The MEMS microphone of claim 1 , wherein the protection film is a proTEK® PSB film.

4. The MEMS microphone of claim 1 , wherein the anchor element is flush with the first backplate.

5. The MEMS microphone of claim 1 , wherein the protection film at least partially covers top surfaces of the first backplate and the anchor element in the rim region.

6. A method for manufacturing a MEMS microphone, the method comprising:
forming a membrane in a membrane layer;
forming an anchor element in an anchor layer deposited over the membrane layer, wherein the anchor element comprises SiO 2 ;
depositing a first backplate layer over the anchor layer;
structuring the first backplate in the first backplate layer to form a first backplate;
depositing a protection film in a rim region directly onto a side surface of the anchor layer;
removing a material of the anchor layer in a central region while the protection film protects an anchor element;
forming an additional backplate in an additional backplate layer, wherein the membrane layer is arranged between the first backplate layer and the additional backplate layer; and
forming a ring-shaped isolation element in the additional backplate layer, wherein the ring-shaped isolation element comprises silicon dioxide and surrounds a central section of the additional backplate that is aligned directly under an acoustically active region, wherein the ring-shaped isolation element has an uppermost surface disposed at, or below, a level of an uppermost surface of the additional backplate layer, and extends contiguously to a lowermost surface of the ring-shaped isolation element disposed at, or above, a level of a lowermost surface of the additional backplate layer, and wherein the ring-shaped isolation element extends contiguously from an outermost surface of ring-shaped isolation element to an innermost surface of the ring-shaped isolation element that faces the acoustically active region,
wherein the protection film covers an outer side surface of the anchor element but not an inner side surface of the anchor element,
wherein the anchor element mechanically connects the first backplate to the membrane, and
wherein the protection film comprises a material that resists a VHF environment.

7. The method of claim 6 , wherein removing the material of the anchor layer in the central region comprises using a VHF method.

8. The method of claim 7 , wherein the protection film comprises a material that resists a VHF environment.

9. The method of claim 7 , wherein the protection film covers at least partially covers top surfaces of the first backplate and the anchor element in the rim region.

Assignees

• Johansen Leif Steen
• Ravnkilde Jan Tue
• Rombach Pirmin Hermann Otto
• Rasmussen Kurt
• Tdk Corp

Inventors

• Johansen Leif Steen
• Ravnkilde Jan Tue
• Rombach Pirmin Hermann Otto
• Rasmussen Kurt

Classifications

• H04R2201/003

  Mems transducers or their use · CPC title

• B81C2201/053

  Depositing a protective layers · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• H04R19/005 Primary

  using semiconductor materials · CPC title

• H04R31/003

  for diaphragms or their outer suspension · CPC title