Multi baseband termination components for RF power amplifier with enhanced video bandwidth

Patent metadata

Field	Value
Publication number	US-9979360-B1
Application number	US-201615385647-A
Country	US
Kind code	B1
Filing date	Dec 20, 2016
Priority date	Dec 20, 2016
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

An RF amplifier includes a transistor, a shunt circuit, an envelope frequency termination circuit, and an extra lead. The shunt circuit is coupled between a transistor current carrying terminal and a ground reference node. The shunt circuit has a shunt inductive element and a shunt capacitor coupled in series, with an RF cold point node between the shunt inductive element and the shunt capacitor. The envelope frequency termination circuit is coupled between the RF cold point node and the ground reference node. The envelope frequency termination circuit has an envelope resistor, an envelope inductive element, and an envelope capacitor coupled in series. The extra lead is electrically coupled to the RF cold point node. The extra lead provides a lead inductance in parallel with an envelope inductance provided by the envelope inductive element. An additional shunt capacitor can be coupled between the extra lead and ground.

First claim

What is claimed is:

1. A radio frequency (RF) amplifier device comprising:
a transistor with a control terminal and first and second current carrying terminals;
a shunt circuit coupled between the first current carrying terminal and a ground reference node, the shunt circuit having a shunt inductive element and a shunt capacitor coupled in series, with an RF cold point node present between the shunt inductive element and the shunt capacitor;
an envelope frequency termination circuit coupled between the RF cold point node and the ground reference node, the envelope frequency termination circuit having an envelope resistor, an envelope inductive element, and an envelope capacitor coupled in series;
a first lead that is electrically coupled to the RF cold point node, wherein the first lead provides a lead inductance coupled in parallel with an envelope inductance provided by the envelope inductive element;
a first inductive element that is electrically coupled between the RF cold point node and the first lead; and
an isolation structure that is substantially electrically insulating, wherein the first lead extends from the isolation structure.

2. The RF amplifier device of claim 1 further comprising a lead capacitor coupled:
in series with the lead inductance; and
in parallel with the envelope capacitor.

3. The RF amplifier device of claim 1 , wherein the first inductive element includes a plurality of bondwires coupled between the RF cold point node and the first lead, wherein the plurality of bondwires provides an additional inductance in series with the lead inductance, and in parallel with the envelope inductance.

4. The RF amplifier device of claim 1 further comprising:
an input lead; and
an impedance matching circuit coupled between the input lead and the control terminal of the transistor, wherein the impedance matching circuit is a low-pass filter or a band-pass filter.

5. The RF amplifier device of claim 4 wherein the impedance matching circuit comprises a first inductive element, a second inductive element, and a capacitor having a first terminal and a second terminal, wherein:
the first inductive element is coupled between the input lead and a first terminal of the capacitor;
the second inductive element is coupled between the first terminal of the capacitor and the control terminal of the transistor; and
the second terminal of the capacitor is coupled to the ground reference node.

6. The RF amplifier device of claim 1 further comprising:
an output lead; and
a low-pass matching circuit coupled between the first current carrying terminal of the transistor and the output lead.

7. The RF amplifier device of claim 6 wherein the low-pass matching circuit comprises a first inductive element, a second inductive element, and a capacitor having a first terminal and a second terminal, wherein:
the first and second inductive elements are coupled in series between the first current conducting terminal of the transistor and the output lead, with a node between the first and second inductive elements; and
the first terminal of the capacitor is coupled to the node, and the second terminal of the capacitor is coupled to the ground reference node.

8. The RF amplifier device of claim 1 wherein the shunt inductive element comprises a plurality of bondwires coupled between the first current carrying terminal and the RF cold point node.

9. The RF amplifier device of claim 1 , wherein the envelope inductive element comprises a plurality of bondwires or spiral inductors coupled between the RF cold point node and a first terminal of the envelope capacitor.

10. A packaged radio frequency (RF) amplifier device comprising:
a device substrate;
a transistor coupled to the device substrate, wherein the transistor includes a control terminal and first and second current carrying terminals;
a shunt circuit coupled between the first current carrying terminal and a ground reference node, the shunt circuit having a shunt inductive element and a shunt capacitor coupled in series, with an RF cold point node present between the shunt inductive element and the shunt capacitor;
an envelope frequency termination circuit coupled between the RF cold point node and the ground reference node, the envelope frequency termination circuit having an envelope resistor, an envelope inductive element, and an envelope capacitor coupled in series;
a first lead;
a first inductive element that is electrically coupled between the RF cold point node and the first lead, wherein the first lead and the first inductive element provide a lead inductance coupled in parallel with an envelope inductance provided by the envelope inductive element;
an isolation structure that is substantially electrically insulating, wherein the first lead extends from the isolation structure; and
a bond pad corresponding to the RF cold point node, and
wherein the first inductive element comprises a plurality of bondwires coupled between the bond pad and the first lead.

11. The packaged RF amplifier device of claim 10 wherein:
the bond pad is a first bond pad; and
the device further includes a second bond pad and a plurality of bondwires coupling the first and second bond pads.

12. The packaged RF amplifier device of claim 10 wherein the first lead comprises an exposed distal end extending out from the device.

13. The packaged RF amplifier device of claim 10 further comprising:
a second transistor coupled to the device substrate, wherein the second transistor includes a second control terminal and third and fourth current carrying terminals;
a second shunt circuit coupled between the third current carrying terminal and the ground reference node, the second shunt circuit having a second shunt inductive element and a second shunt capacitor coupled in series, with a second RF cold point node present between the second shunt inductive element and the second shunt capacitor;
a second envelope frequency termination circuit coupled between the second RF cold point node and the ground reference node, the second envelope frequency termination circuit having a second envelope resistor, a second envelope inductive element, and a second envelope capacitor coupled in series;
a second lead; and
a second inductive element that is electrically coupled between the second RF cold point node and the second lead, wherein the second lead and the second inductive element provide a second lead inductance coupled in parallel with a second envelope inductance provided by the second envelope inductive element.

14. The packaged RF amplifier device of claim 13 wherein the second inductive element comprises a second plurality of bondwires coupled between the second RF cold point node and the second lead.

15. The packaged RF amplifier device of claim 13 wherein:
each of the first and second leads includes a distal end and a proximal end; and
the distal ends extend out from the device and are exposed.

16. The packaged RF amplifier device of claim 10 wherein the shunt inductive element comprises a plurality of bondwires coupled between the first current carrying terminal and the RF cold point node.

17. The packaged RF amplifier device of claim 10 wherein the envelope inductive element comprises a plurality of bondwires or spiral inductors coupled between the RF cold point node and a first terminal of the envelope capacitor.

18. A radio frequency (RF) amplifier device comprising:
an input lead and an output lead;
a transistor with a control terminal and first and second current carrying terminals;
an

Assignees

• Nxp Usa Inc

Inventors

• Mclaren Roy
• Zhu Ning
• Holmes Damon G
• Jones Jeffrey Kevin

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/537

  Multiple bond wires having different shapes · CPC title

• H10W72/07553

  changes in shapes · CPC title

• H10W90/759

  between a chip and a laterally-adjacent discrete passive device · CPC title