DC boosting circuit with at least one energy storage element

Patent metadata

Field	Value
Publication number	US-9979283-B2
Application number	US-201514933370-A
Country	US
Kind code	B2
Filing date	Nov 5, 2015
Priority date	Nov 5, 2014
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A DC boosting circuit includes switch connected to a first circuit and a second circuit. The first circuit includes first and second elements, and the second circuit includes the second element and a third element. The first and second elements store energy based on an input voltage when the switch is in a first state. The third element stores energy from the second element when the switch is in the second state. The second circuit outputs a voltage greater than the input voltage, and the first, second, and third elements are reactors or capacitors.

First claim

What is claimed is:

1. A DC boosting circuit, comprising:
a first switch having a first end connected to a first node;
a first diode has a first end connected to the first node and a second end connected to a second node;
a first reactor having a first end connected to the first node and a second end connected to a DC power supply;
a first capacitor having a first end connected to a second end of the first switch and a second end connected to the second node;
a second diode having a first end connected to the second node and a second end connected to a third node;
a third diode having a first end connected to the third node and a second end connected to an output terminal to output a boosted voltage of the DC power supply;
a second capacitor having a first end connected to the first node and a second end connected to the third node, and wherein the second capacitor has a same electrical potential as the first capacitor when the first switch is turned on, wherein the third diode is connected between the second node and the output terminal.

2. The circuit as claimed in claim 1 , further comprising:
a second switch connected in parallel to the first diode;
a third switch connected in parallel to the second diode; and
a fourth switch connected in parallel to the third diode.

3. The circuit as claimed in claim 1 , further comprising:
a second reactor between the first end of the first reactor and the first end of the second capacitor.

4. The circuit as claimed in claim 3 , further comprising:
a plurality of DC boosting circuits that share the first capacitor and the second reactor.

5. The circuit as claimed in claim 3 , wherein the first and second reactors are wound around a same iron core.

6. The circuit as claimed in claim 1 , further comprising:
a plurality of DC boosting circuits that share the first capacitor.

7. The circuit as claimed in claim 6 , wherein the DC boosting circuits are to be operated in an interleaving mode.

8. A boosting circuit, comprising:
a first circuit including a first element and a second element;
a second circuit including the first element and a third element; and
a switch connected to the first circuit and the second circuit,
wherein the first element and the second element are to store energy based on an input voltage when the switch is in a first state, and the third element is to store energy from the second element when the switch is in a second state, wherein the second circuit is to output a voltage greater than the input voltage, and wherein each of the first element, the second element, and the third element is a reactor or a capacitor, and wherein the third element has a same electrical potential as the second element when the switch is in the second state, wherein the first state is an off state of the switch and the second state is an on state of the switch.

9. The circuit as claimed in claim 8 , further comprising:
a fourth element in the second circuit,
wherein the fourth element is to store energy from the first element when the switch is in the first state and wherein the fourth element is a capacitor or reactor.

10. The circuit as claimed in claim 9 , wherein the fourth element is to store energy from the second element when the switch is in the second state and is to store energy from the first element when the switch is in the first state.

11. The circuit as claimed in claim 10 , wherein the fourth element is to store energy along a path which includes the second element and the third element when the switch is in the second state.

12. The circuit as claimed in claim 11 , wherein the third element is to store energy from the second element when the switch is in the second state.

13. The circuit as claimed in claim 8 , wherein the voltage to be output from the second circuit is based on a sum of the energy from the first element and the energy from the third element.

14. The circuit as claimed in claim 9 , wherein the switch is connected to the first element, the second element, and the fourth element.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Yatsu Makoto

Classifications

• H02M3/07 Primary

  using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} · CPC title

• H02M3/156

  with automatic control of output voltage or current, e.g. switching regulators · CPC title

• H02M3/158

  including plural semiconductor devices as final control devices for a single load · CPC title

• H02M2001/0064

  Electricity · mapped topic

• H02M1/0064

  Magnetic structures combining different functions, e.g. storage, filtering or transformation · CPC title